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Effect of Photoacid Generator Concentration and Developer Strength on the Patterning Capabilities of a Model EUV Photoresist

Published

Author(s)

Kwang-Woo Choi, Vivek Prabhu, Kristopher Lavery, Eric K. Lin, Wen-Li Wu, John T. Woodward IV, Michael Leeson, H Cao, Manish Chandhok, George Thompson

Abstract

Current extreme ultraviolet (EUV) photoresist materials do not yet meet requirements on exposure-dose sensitivity, line-width roughness (LWR), and resolution. Fundamental studies are required to quantify the trade-offs in materials properties and processing steps for EUV photoresist specific problems such as high photoacid generator (PAG) loadings and the use of very thin films. Furthermore, new processing strategies such as changes in the developer strength and composition may enable increased resolution. In this work, model photoresists are used to investigate the influence of photoacid generator loading and developer strength effects on EUV lithographically printed images. Measurements of line width roughness and developed line-space patterns were performed.
Proceedings Title
Proceedings of SPIE
Volume
6519
Conference Dates
February 25-March 2, 2007
Conference Location
San Jose, CA, US
Conference Title
SPIE Advanced Lithography

Keywords

chemically amplified phoresists, diffusion, neutron reflectivity, photolithographty, swelling

Citation

Choi, K. , Prabhu, V. , Lavery, K. , Lin, E. , Wu, W. , Woodward IV, J. , Leeson, M. , Cao, H. , Chandhok, M. and Thompson, G. (2007), Effect of Photoacid Generator Concentration and Developer Strength on the Patterning Capabilities of a Model EUV Photoresist, Proceedings of SPIE, San Jose, CA, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852725 (Accessed April 21, 2024)
Created February 24, 2007, Updated October 12, 2021