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Search Publications by: Albert Davydov (Fed)

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Displaying 26 - 50 of 343

Distinct Contact Scaling Effects in MoS2 Transistors Revealed with Asymmetrical Contact Measurements

February 27, 2023
Author(s)
Zhihui Cheng, Curt A. Richter, Hattan Abuzaid, Jonathan Backman, Mathieu Luisier, Huairuo Zhang, Albert Davydov, Guoqing Li, Yifei Yu, Linyou Cao, Aaron Franklin
Two-dimensional (2D) materials have great potential for use in future electronics due to their atomic thin nature which withstands short channel effects and thus enables better scalability. Since improved scalability is the core advantage, both the channel

Elemental excitations in MoI3 one-dimensional van der Waals nanowires

November 28, 2022
Author(s)
Fariborz Kargar, Zahra Barani, Nicholas Sesing, Thuc Mai, Topojit Debnath, Huairuo Zhang, Yuhang Liu, Yanbing Zhu, Subhajit Ghosh, Adam Biacchi, Felipe H. da Jornada, Ludwig Bartels, Tehseen Adel, Angela R. Hight Walker, Albert Davydov, Tina Salguero, Roger Lake, Alexander Balandin
We report the polarization-dependent Raman spectrum of exfoliated MoI3, a van der Waals material with a "true one-dimensional" crystal structure that can be exfoliated to individual atomic chains. The temperature evolution of several Raman features reveals

Phase-transition-induced Thermal Hysteresis in Type-II Weyl Semimetals MoTe2 and Mo(1-x)W(x)Te2

November 19, 2022
Author(s)
Md Sabbir Akhanda, Sergiy Krylyuk, Diane Dickie, Albert Davydov, Fei Han, Mingda Li, Mona Zebarjadi
The resistivity versus temperature measurement is commonly used for identifying temperature-induced phase change and the resulting hysteresis loop. While the resistance is influenced by both the density of states and the carrier lifetimes, the Seebeck

Heterojunction tunnel triodes based on two-dimensional metal selenide and three-dimensional silicon

October 27, 2022
Author(s)
Jinshui Miao, Chloe Leblanc, Jinjin Wang, Yue Gu, Xiwen Liu, Baokun Song, Huairuo Zhang, Sergiy Krylyuk, Weida Hu, Albert Davydov, Tyson Back, Nicholas Glavin, Deep Jariwala
Low power consumption in the static and dynamic modes of operation is a key requirement in the development of modern electronics. Tunnel field-effect transistors with direct band-to-band charge tunnelling and steep-subthreshold-slope transfer

Transport Properties of Few-Layer NbSe2: from Electronic Structure to Thermoelectric Properties

July 20, 2022
Author(s)
Tianhui Zhu, Peter Litwin, Md Golam Rosul, Devin Jessup, Md Sabbir Akhanda, Farjana Tonni, Sergiy Krylyuk, Albert Davydov, Petra Reinke, Stephen McDonnell, Mona Zebarjadi
4-layer NbSe2 is grown on SiO2 by molecular beam epitaxy. The in-situ X-ray photoelectron spectroscopy (XPS) measurements suggest a Nb-rich stoichiometry (Nb1+xSe2) likely due to intercalation of Nb atoms in between the NbSe2 layers. The metallic nature of

Rapid Phase Transition of Al2O3 Encapsulated MoTe2 via Thermal Annealing

July 19, 2022
Author(s)
Rohan Sengupta, Saroj Dangi, Sergiy Krylyuk, Albert Davydov, Spyridon Pavlidis
MoTe2 has gained a lot of attention recently as a potential phase change material candidate for low-power nonvolatile switches and high-density memory applications, due to the smallest predicted energy offset between its semiconducting 2H and semimetallic

Self-Driven Highly Responsive PN Junction InSe Heterostructure Near-Infrared Light Detector

June 30, 2022
Author(s)
Chandraman Patil, Chaobo Dong, Hao Wang, Hamed Dalir, Sergiy Krylyuk, Huairuo Zhang, Albert Davydov, Volker Sorger
Photodetectors converting light signals into detectable photocurrents are ubiquitously in use today. To improve the compactness and performance of next-generation devices and systems, low dimensional materials provide rich physics to engineering the light

Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structures

April 29, 2022
Author(s)
Norman A. Sanford, Paul T. Blanchard, Alexana Roshko, Ashwin Rishinaramangalam, Daniel Feezell, Albert Davydov
Laser-assisted atom probe tomography (L-APT) was used to measure the indium mole fraction x of c-plane, MOCVD-grown, GaN/InxGa1-xN/GaN test structures and the results were compared with Rutherford backscattering analysis (RBS). Four separate sample types

Are 2D Interfaces Really Flat?

March 15, 2022
Author(s)
Zhihui Cheng, Huairuo Zhang, Son Le, Hattan Abuzaid, Guoqing Li, Yifei Yu, Albert Davydov, Linyou Cao, Aaron Franklin, Curt A. Richter
Two-dimensional (2D) materials are amenable to external mechanical deformation and thus forming bubbles and wrinkles. However, little is known about the dynamics of 2D interfaces, especially their flatness under different conditions. Here we use cross

Electrochemically Assaying Dopamine with p-Doped Silicon Nanowires

March 14, 2022
Author(s)
Nawaraj Karki, Albert Davydov, Sergiy Krylyuk, Charles Chusuei
Neuroblastoma, a pediatric cancer, is characterized by high urinary excretion of dopamine (DA). Silicon nanowires (SiNWs), which are nontoxic and known to resist surface fouling in biological samples, were investigated for practical use as working

Spatially-resolved bandgap and dielectric function in two-dimensional materials from Electron Energy Loss Spectroscopy

February 15, 2022
Author(s)
Abel Brokkelkamp, Jaco ter Hoeve, Isabel Postmes, Sabrya van Heijst, Luigi Maduro, Albert Davydov, Sergiy Krylyuk, Juan Rojo, Sonia Conesa Boj
The electronic properties of two-dimensional (2D) materials depend sensitively on the underlying atomic arrangement down to the monolayer level. Here we present a novel strategy for the determination of the band gap and complex dielectric function in 2D