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Search Publications by: Albert Davydov (Fed)

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Displaying 26 - 50 of 184

Elemental excitations in MoI3 one-dimensional van der Waals nanowires

November 28, 2022
Author(s)
Fariborz Kargar, Zahra Barani, Nicholas Sesing, Thuc Mai, Topojit Debnath, Huairuo Zhang, Yuhang Liu, Yanbing Zhu, Subhajit Ghosh, Adam Biacchi, Felipe H. da Jornada, Ludwig Bartels, Tehseen Adel, Angela R. Hight Walker, Albert Davydov, Tina Salguero, Roger Lake, Alexander Balandin
We report the polarization-dependent Raman spectrum of exfoliated MoI3, a van der Waals material with a "true one-dimensional" crystal structure that can be exfoliated to individual atomic chains. The temperature evolution of several Raman features reveals

Phase-transition-induced Thermal Hysteresis in Type-II Weyl Semimetals MoTe2 and Mo(1-x)W(x)Te2

November 19, 2022
Author(s)
Md Sabbir Akhanda, Sergiy Krylyuk, Diane Dickie, Albert Davydov, Fei Han, Mingda Li, Mona Zebarjadi
The resistivity versus temperature measurement is commonly used for identifying temperature-induced phase change and the resulting hysteresis loop. While the resistance is influenced by both the density of states and the carrier lifetimes, the Seebeck

Heterojunction tunnel triodes based on two-dimensional metal selenide and three-dimensional silicon

October 27, 2022
Author(s)
Jinshui Miao, Chloe Leblanc, Jinjin Wang, Yue Gu, Xiwen Liu, Baokun Song, Huairuo Zhang, Sergiy Krylyuk, Weida Hu, Albert Davydov, Tyson Back, Nicholas Glavin, Deep Jariwala
Low power consumption in the static and dynamic modes of operation is a key requirement in the development of modern electronics. Tunnel field-effect transistors with direct band-to-band charge tunnelling and steep-subthreshold-slope transfer

Transport Properties of Few-Layer NbSe2: from Electronic Structure to Thermoelectric Properties

July 20, 2022
Author(s)
Tianhui Zhu, Peter Litwin, Md Golam Rosul, Devin Jessup, Md Sabbir Akhanda, Farjana Tonni, Sergiy Krylyuk, Albert Davydov, Petra Reinke, Stephen McDonnell, Mona Zebarjadi
4-layer NbSe2 is grown on SiO2 by molecular beam epitaxy. The in-situ X-ray photoelectron spectroscopy (XPS) measurements suggest a Nb-rich stoichiometry (Nb1+xSe2) likely due to intercalation of Nb atoms in between the NbSe2 layers. The metallic nature of

Rapid Phase Transition of Al2O3 Encapsulated MoTe2 via Thermal Annealing

July 19, 2022
Author(s)
Rohan Sengupta, Saroj Dangi, Sergiy Krylyuk, Albert Davydov, Spyridon Pavlidis
MoTe2 has gained a lot of attention recently as a potential phase change material candidate for low-power nonvolatile switches and high-density memory applications, due to the smallest predicted energy offset between its semiconducting 2H and semimetallic

Self-Driven Highly Responsive PN Junction InSe Heterostructure Near-Infrared Light Detector

June 30, 2022
Author(s)
Chandraman Patil, Chaobo Dong, Hao Wang, Hamed Dalir, Sergiy Krylyuk, Huairuo Zhang, Albert Davydov, Volker Sorger
Photodetectors converting light signals into detectable photocurrents are ubiquitously in use today. To improve the compactness and performance of next-generation devices and systems, low dimensional materials provide rich physics to engineering the light

Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structures

April 29, 2022
Author(s)
Norman A. Sanford, Paul T. Blanchard, Alexana Roshko, Ashwin Rishinaramangalam, Daniel Feezell, Albert Davydov
Laser-assisted atom probe tomography (L-APT) was used to measure the indium mole fraction x of c-plane, MOCVD-grown, GaN/InxGa1-xN/GaN test structures and the results were compared with Rutherford backscattering analysis (RBS). Four separate sample types

Are 2D Interfaces Really Flat?

March 15, 2022
Author(s)
Zhihui Cheng, Huairuo Zhang, Son Le, Hattan Abuzaid, Guoqing Li, Yifei Yu, Albert Davydov, Linyou Cao, Aaron Franklin, Curt A. Richter
Two-dimensional (2D) materials are amenable to external mechanical deformation and thus forming bubbles and wrinkles. However, little is known about the dynamics of 2D interfaces, especially their flatness under different conditions. Here we use cross

Electrochemically Assaying Dopamine with p-Doped Silicon Nanowires

March 14, 2022
Author(s)
Nawaraj Karki, Albert Davydov, Sergiy Krylyuk, Charles Chusuei
Neuroblastoma, a pediatric cancer, is characterized by high urinary excretion of dopamine (DA). Silicon nanowires (SiNWs), which are nontoxic and known to resist surface fouling in biological samples, were investigated for practical use as working

Spatially-resolved bandgap and dielectric function in two-dimensional materials from Electron Energy Loss Spectroscopy

February 15, 2022
Author(s)
Abel Brokkelkamp, Jaco ter Hoeve, Isabel Postmes, Sabrya van Heijst, Luigi Maduro, Albert Davydov, Sergiy Krylyuk, Juan Rojo, Sonia Conesa Boj
The electronic properties of two-dimensional (2D) materials depend sensitively on the underlying atomic arrangement down to the monolayer level. Here we present a novel strategy for the determination of the band gap and complex dielectric function in 2D

Thickness-dependent transport properties and photoresponse in MoSe2 field-effect transistors

February 4, 2022
Author(s)
Shiqi Guo, Sergiy Krylyuk, Hsin Y. Lee, Ratan K. Debnath, Albert Davydov, Mona E. Zaghloul
Transition metal dichalcogenides have been studied extensively due to their unique properties in low-dimensional limits. In this work, we have examined the effect of MoSe2 layer thickness on its electrical properties in a field effect transistor (FET)

Charge Density Wave Activated Excitons in MoSe2

January 5, 2022
Author(s)
Jaydeep Joshi, Benedikt Scharf, Igor Mazin, Sergiy Krylyuk, Daniel Campbell, Albert Davydov, Johnpierre Paglione, Igor Zutic, Patrick Vora
Layered materials enable the assembly of a new class of heterostructures where lattice-matching is no longer a requirement. Interfaces in these heterostructures therefore become a fertile ground for new physics as dissimilar phenomena can be coupled via

Perpendicular magnetic tunnel junctions with multi-interface free layer

December 15, 2021
Author(s)
Pravin Khanal, Bowei Zhou, Magda Andrade, Yanliu Dang, Albert Davydov, Ali Habiboglu, Jonah Saidian, Adam Laurie, Jian-Ping Wang, Daniel Gopman, Weigang Wang
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular magnetic tunnel

Bulk-Like Properties Observed From High Density GaN Nanocolumns Grown by Molecular Beam Epitaxy

October 12, 2021
Author(s)
J E. Van Nostrand, R Cortez, J Boecki, J D. Albrecht, C E. Stutz, K L. Averett, Norman Sanford, Albert Davydov
Vertical GaN nanocolumns (NCs) having a width of 90+10 nm and a length of the film thickness were grown by plasma-assisted molecular beam epitaxy on Al_subscript 2)O_subscript 3} (0001). Low temperature photo-luminescence measurements of NC films results

Influence of Polarity on GaN Thermal Stability

October 12, 2021
Author(s)
M A. Mastro, O M. Kryliouk, T J. Anderson, Albert Davydov, Alexander J. Shapiro
A comparative study of the stability of Ga- and N-polar GaN films was made in different gas ambients (N2, H2, NH3, HCl). The Ga-polar films were observed to undergo a dissociative sublimation, while the N-polar films formed condensed Ga in addition to the

InN Layers Grown by HVPE

October 12, 2021
Author(s)
A Syrkin, V Ivantsov, A Usikov, Vladimir A. Dmitriev, G Chambard, P Ruterana, Albert Davydov, Siddarth Sundaresan, E Lutsenko, A V. Mudryi, E D. Readinger, G D. Chern-Metcalfe, M Wraback
We report on the first time demonstration and properties of high quality HVPE InN and on successful subsequent MBE growth of InN layers with improved characteristics on template substrates. InN layers were grown on GaN/sapphire HVPE grown templates. The

Low barrier height in a ZnO nanorods/NbSe2 heterostructure prepared by van der Waals epitaxy

September 9, 2021
Author(s)
Yeonhoo Kim, Roxanne Tutchton, Ren Liu, Sergiy Krylyuk, Jian-Xin Zhu, Albert Davydov, Young Joon Hong, Jinkyoung Yoo
Two-dimensional (2D) materials as contacts for semiconductor devices have attracted great attention due to minimizing Fermi level pinning. Schottky–Mott physics has been widely employed to design 2D material-based electrodes and to elucidate their contact

Mobility Extraction in 2D Transition Metal Dichalcogenide Devices - Avoiding Contact Resistance Implicated Overestimation

June 10, 2021
Author(s)
Chin-Sheng Pang, Ruiping Zhou, Xiangkai Liu, Peng Wu, Terry Y. Hung, Shiqi Guo, Mona E. Zaghloul, Sergiy Krylyuk, Albert Davydov, Joerg Appenzeller, Zhihong Chen
Schottky barrier (SB) transistors operate distinctly different from conventional metal-oxide semiconductor field-effect transistors (MOSFETs), in a unique way that the gate impacts the carrier injection from the metal source/drain contacts into the channel
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