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Thickness-dependent transport properties and photoresponse in MoSe2 field-effect transistors

Published

Author(s)

Shiqi Guo, Sergiy Krylyuk, Hsin Y. Lee, Ratan K. Debnath, Albert Davydov, Mona E. Zaghloul

Abstract

Transition metal dichalcogenides have been studied extensively due to their unique properties in low-dimensional limits. In this work, we have examined the effect of MoSe2 layer thickness on its electrical properties in a field effect transistor (FET), including carrier mobility, sheet resistance (RS), contact resistance (RC), and photocurrent behavior. Transfer length measurements reveal that RS and RC decrease with increasing MoSe2 layer thickness in the 1 nm to 10 nm range, with a follow-up increase for thicker layers. Thickness dependence of carrier mobility follows the opposite trend, reaching 138 cm2V-1s-1 for 10 nm thick channel. Similarly to the mobility dependence, the UV photoresponse rate and photocurrent are largest at 10 nm layer thickness. These results provide guidance for selecting an optimal thickness of MoSe2 layers for electronic and optoelectronic applications.
Citation
Applied Physics Letters

Keywords

MoSe2, field-effect transistor, mobility, photoresponse

Citation

Guo, S. , Krylyuk, S. , Lee, H. , Debnath, R. , Davydov, A. and Zaghloul, M. (2022), Thickness-dependent transport properties and photoresponse in MoSe2 field-effect transistors, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=927791 (Accessed August 16, 2022)
Created February 4, 2022, Updated February 23, 2022