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Heterojunction tunnel triodes based on two-dimensional metal selenide and three-dimensional silicon

Published

Author(s)

Jinshui Miao, Chloe Leblanc, Jinjin Wang, Yue Gu, Xiwen Liu, Baokun Song, Huairuo Zhang, Sergiy Krylyuk, Weida Hu, Albert Davydov, Tyson Back, Nicholas Glavin, Deep Jariwala

Abstract

Low power consumption in the static and dynamic modes of operation is a key requirement in the development of modern electronics. Tunnel field-effect transistors with direct band-to-band charge tunnelling and steep-subthreshold-slope transfer characteristics offer one potential solution. However, silicon and III–V heterojunction-based tunnel field-effect transistors suffer from low on-current densities and on/off current ratios at sub-60 mV decade–1 operation. Tunnel field-effect transistors based on two-dimensional materials can offer improved electrostatic control and potentially higher on-current densities and on/ off ratios. Here we report gate-tunable heterojunction tunnel triodes that are based on van der Waals heterostructures formed from two-dimensional metal selenide and three-dimensional silicon. These triodes exhibit subthreshold slopes as low as 6.4 mV decade–1 and average subthreshold slopes of 34.0 mV decade–1 over four decades of drain current. The devices have a current on/off ratio of approximately 106 and an on-state current density of 0.3 μA μm–1 at a drain bias of –1 V.
Citation
Nature Electronics
Volume
5

Keywords

Tunneling, sub-threshold, InSe, Silicon, van der Waals, heterojunction, triode

Citation

Miao, J. , Leblanc, C. , Wang, J. , Gu, Y. , Liu, X. , Song, B. , Zhang, H. , Krylyuk, S. , Hu, W. , Davydov, A. , Back, T. , Glavin, N. and Jariwala, D. (2022), Heterojunction tunnel triodes based on two-dimensional metal selenide and three-dimensional silicon, Nature Electronics, [online], https://doi.org/10.1038/s41928-022-00849-0, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=933634 (Accessed April 18, 2024)
Created October 27, 2022, Updated December 1, 2022