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Comparison of Solid-State Microwave Annealing With Conventional Furnace Annealing of Ion-Implanted SiC

Published

Author(s)

Siddarth Sundaresan, M V. Rao, Yong-lai Tian, John A. Schreifels, M. Wood, K Jones, Albert Davydov

Abstract

Rapid solid-state microwave annealing was performed for the first time on N-, Al-, and B-implanted SiC and the results were compared with the conventional furnace annealing. For microwave annealing, temperatures > 2000 degree C were attained with heating rates exceeding 600 degree C/s. An 1850 degree C/35 s microwave anneal yielded an RMS surface roughness of 2 nm, which is lower than 6 nm obtained for 1500 degree C/15 min conventional furnace annealing. For the Al-implants, a minimum room temperature sheet resistance (R_subscript s}) of 7 k omega/square was measured upon microwave annealing. For the microwave annealing, Rutherford back-scattering measurements indicated a better structural quality and secondary-ion-mass-spectrometry boron implant depth profiles showed reduced boron redistribution compared to the corresponding results of the furnace annealing.
Citation
Journal of Electronic Materials

Keywords

implantation, rapid thermal anneal, wide-band-gap semiconductors

Citation

Sundaresan, S. , Rao, M. , Tian, Y. , Schreifels, J. , Wood, M. , Jones, K. and Davydov, A. (2021), Comparison of Solid-State Microwave Annealing With Conventional Furnace Annealing of Ion-Implanted SiC, Journal of Electronic Materials (Accessed May 21, 2024)

Issues

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Created October 12, 2021