Comparison of Solid-State Microwave Annealing With Conventional Furnace Annealing of Ion-Implanted SiC
Siddarth Sundaresan, M V. Rao, Yong-lai Tian, John A. Schreifels, M. Wood, K Jones, Albert Davydov
Rapid solid-state microwave annealing was performed for the first time on N-, Al-, and B-implanted SiC and the results were compared with the conventional furnace annealing. For microwave annealing, temperatures > 2000 degree C were attained with heating rates exceeding 600 degree C/s. An 1850 degree C/35 s microwave anneal yielded an RMS surface roughness of 2 nm, which is lower than 6 nm obtained for 1500 degree C/15 min conventional furnace annealing. For the Al-implants, a minimum room temperature sheet resistance (R_subscript s}) of 7 k omega/square was measured upon microwave annealing. For the microwave annealing, Rutherford back-scattering measurements indicated a better structural quality and secondary-ion-mass-spectrometry boron implant depth profiles showed reduced boron redistribution compared to the corresponding results of the furnace annealing.
, Rao, M.
, Tian, Y.
, Schreifels, J.
, Wood, M.
, Jones, K.
and Davydov, A.
Comparison of Solid-State Microwave Annealing With Conventional Furnace Annealing of Ion-Implanted SiC, Journal of Electronic Materials
(Accessed December 7, 2023)