Comparison of Solid-State Microwave Annealing With Conventional Furnace Annealing of Ion-Implanted SiC

Published

October 12, 2021

Author(s)

Siddarth Sundaresan, M V. Rao, Yong-lai Tian, John A. Schreifels, M. Wood, K Jones, Albert Davydov

Abstract

Rapid solid-state microwave annealing was performed for the first time on N-, Al-, and B-implanted SiC and the results were compared with the conventional furnace annealing. For microwave annealing, temperatures > 2000 degree C were attained with heating rates exceeding 600 degree C/s. An 1850 degree C/35 s microwave anneal yielded an RMS surface roughness of 2 nm, which is lower than 6 nm obtained for 1500 degree C/15 min conventional furnace annealing. For the Al-implants, a minimum room temperature sheet resistance (R_subscript s}) of 7 k omega/square was measured upon microwave annealing. For the microwave annealing, Rutherford back-scattering measurements indicated a better structural quality and secondary-ion-mass-spectrometry boron implant depth profiles showed reduced boron redistribution compared to the corresponding results of the furnace annealing.

Citation

Journal of Electronic Materials

Pub Type

Journals

Keywords

implantation, rapid thermal anneal, wide-band-gap semiconductors

Citation

Sundaresan, S. , Rao, M. , Tian, Y. , Schreifels, J. , Wood, M. , Jones, K. and Davydov, A. (2021), Comparison of Solid-State Microwave Annealing With Conventional Furnace Annealing of Ion-Implanted SiC, Journal of Electronic Materials (Accessed October 8, 2025)