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Search Publications by: Eric K. Lin (Fed)

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Displaying 201 - 225 of 392

Substrate Influence on Moisture Absorption Into Thin Poly(vinyl pyrrolidone) Films

January 1, 2005
Author(s)
B D. Vogt, Christopher L. Soles, Hae-Jeong Lee, Eric K. Lin, Wen-Li Wu
The influence of substrate surface energy on the swelling of poly(vinyl pyrrolidone) (PVP) films was examined using x-ray reflectivity (XR) and quartz crystal microbalance (QCM) measurements. Two different silicon surface treatments were used for the PVP

Formation of Deprotected Fuzzy Blobs in Chemically Amplified Resists

September 1, 2004
Author(s)
Ronald L. Jones, C G. Willson, T Hu, Eric K. Lin, Wen-Li Wu, D L. Goldfarb, M Angelopoulos, B C. Trinque, G M. Schmidt, M D. Stewart
The requirement of nanometer dimensional control in photolithographic patterning underlies the future of emerging technologies including next generation semiconductors, nanofluidics, photonics, and microelectronic machines (MEMs). Dimensional control is

Proton NMR Determination of Miscibility in a Bulk Model Photoresist System Poly (4-Hydroxystyene) and the Photoacid Generator, Di(t-butylphenyl) Iodonium Perfluorooctane Sulfonate

July 13, 2004
Author(s)
David L. VanderHart, Vivek M. Prabhu, Eric K. Lin
The intimacy of component mixing in 2 blends of poly(4-hydroxystyrene) (PHS) and a photoacid generator (PAG), di(t-butylphenyl) iodonium perfluorooctane sulfonate (PFOS) were studied by solid state proton NMR. Mass ratios were 91/9 and 85/15 PHS/PFOS

Correlation of the Reaction Front With Roughness in Chemically Amplified Photoresists

July 1, 2004
Author(s)
Ronald L. Jones, Vivek M. Prabhu, D M. Goldfarb, Eric K. Lin, Christopher L. Soles, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Wen-Li Wu, M Angelopoulos
A model bilayer geometry is used to examine fundamental contributions of in-situ reaction front profile width on resulting line edge roughness after development in standard 0.26 N tetramethyl ammonium hydroxide aqueous base developer. The bilayer geometry

Structure Characterization of Porous Interlevel Dielectric Films

June 21, 2004
Author(s)
Wen-Li Wu, Eric K. Lin, Christopher L. Soles
To extend the dielectric constant of interlevel dielectrics below a value of ~2.6 seen in today s IC chips, porous low-k material has been evaluated as a viable candidate by industries. In this paper, the current status and the future need in metrologies

Interfacial Effects on Moisture Absorption in Thin Polymer Films

June 1, 2004
Author(s)
B D. Vogt, Christopher L. Soles, Ronald L. Jones, C M. Wang, Eric K. Lin, Wen-Li Wu, Sushil K. Satija, D L. Goldfarb, M Angelopoulos
Moisture absorption in model photoresist films of poly(4-hydroxystryene) (PHOSt) and poly(tert-butoxycarboxystyrene) (PBOCSt) was measured by x-ray and neutron reflectivity. The degree of swelling in the films upon moisture exposure was found to be

X-Ray and Neutron Porosimetry as Powerful Methodologies for Determining Structural Characteristics of Porous Low-k Thin Films

June 1, 2004
Author(s)
Hae-Jeong Lee, B D. Vogt, Christopher L. Soles, Da-Wei Liu, Barry J. Bauer, Wen-Li Wu, Eric K. Lin, Gwi-Gwon Kang, Min-Jin Ko
Methylsilsesquioxane based porous low-k dielectric films with varying porogen loading have been characterized using X-ray and neutron porosimetry to determine their pore size distribution, average density, wall density, porosity, density profiles, and