Wu, W.
, Lin, E.
and Soles, C.
(2004),
Structure Characterization of Porous Interlevel Dielectric Films, Future Fab International, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852387
(Accessed September 8, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Structure Characterization of Porous Interlevel Dielectric Films
Published
Author(s)
, ,
Abstract
To extend the dielectric constant of interlevel dielectrics below a value of ~2.6 seen in today s IC chips, porous low-k material has been evaluated as a viable candidate by industries. In this paper, the current status and the future need in metrologies for characterizing porous structure including porosity and pore size distribution are discussed.Citation
Future Fab International
Volume
17
Pub Type
Journals
Download Paper
Keywords
computer chip, dielectrics, integrated circuit, interconnect, interlevel, nanoporous, neutron scattering, porosity, x-ray reflectivity
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created June 21, 2004, Updated February 17, 2017