Structure Characterization of Porous Interlevel Dielectric Films
Wen-Li Wu, Eric K. Lin, Christopher L. Soles
To extend the dielectric constant of interlevel dielectrics below a value of ~2.6 seen in today s IC chips, porous low-k material has been evaluated as a viable candidate by industries. In this paper, the current status and the future need in metrologies for characterizing porous structure including porosity and pore size distribution are discussed.
, Lin, E.
and Soles, C.
Structure Characterization of Porous Interlevel Dielectric Films, Future Fab International, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852387
(Accessed June 5, 2023)