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Structure Characterization of Porous Interlevel Dielectric Films

Published

Author(s)

Wen-Li Wu, Eric K. Lin, Christopher L. Soles

Abstract

To extend the dielectric constant of interlevel dielectrics below a value of ~2.6 seen in today s IC chips, porous low-k material has been evaluated as a viable candidate by industries. In this paper, the current status and the future need in metrologies for characterizing porous structure including porosity and pore size distribution are discussed.
Citation
Future Fab International
Volume
17

Keywords

computer chip, dielectrics, integrated circuit, interconnect, interlevel, nanoporous, neutron scattering, porosity, x-ray reflectivity

Citation

Wu, W. , Lin, E. and Soles, C. (2004), Structure Characterization of Porous Interlevel Dielectric Films, Future Fab International, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852387 (Accessed April 14, 2024)
Created June 21, 2004, Updated February 17, 2017