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Search Publications by: Ulf Griesmann (Fed)

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Displaying 51 - 61 of 61

Atomic Oscillator Strengths by Emission Spectroscopy and Lifetime Measurements

May 1, 2002
Author(s)
Wolfgang L. Wiese, Ulf Griesmann, R Kling, J Musielok
A series of atomic oscillator strengths measurements was carried out in the last seven years at NIST with a combination of emission spectroscopy and lifetime measurements. Several light elements, specifically C, N, O, F and Ne, and two medium-heavy

New Optical Metrology at NIST for Semiconductor Lithography

April 17, 2002
Author(s)
Ulf Griesmann, Tony L. Schmitz, Johannes A. Soons
Optical semiconductor lithography in the deep ultraviolet (DUV) and next generation lithographies such as extreme ultraviolet lithography (EUVL) create many new challenges for surface figure metrology. We discuss the needs for flatness metrology of silicon

Absolute Transition Rates for Transitions From 5p Levels in Kr II

March 1, 2001
Author(s)
Krzysztof Dzierzega, Ulf Griesmann, Gillian Nave, L Bratasz
Branching ratios were measured for 155 electric dipole transitions from 5p and 5p1 levels of singly ionized Kr between 200 nm and 2400 nm. Of these, 83 were measured for the first time. Absolute transition rates for prominent lines, with uncertainties as

Accurate Transition Rates for the 5p-5s Transitions in Kr I

August 1, 2000
Author(s)
Krzysztof Dzierzega, U Volz, Gillian Nave, Ulf Griesmann
Branching fractions were measured for electric dipole transitions for the 5p upper levels to the 5s levels in neutral Krypton atoms. The measurements were made with a wall-stabilized electric arc for the spectral lines in the visible, and with a hollow

Refractivity of Nitrogen Gas in the Vacuum Ultraviolet

December 1, 1999
Author(s)
Ulf Griesmann, John H. Burnett
We have measured the refractivity of nitrogen gas in the ultraviolet and vacuum ultraviolet using a Fourier transform spectrometer. A new two-term Sellmeier formula for the standard refractivity between 145 nm and 270 nm is derived.