Griesmann, U.
, Schmitz, T.
and Soons, J.
(2002),
New Optical Metrology at NIST for Semiconductor Lithography, ASPE Conference - Progress in Precision, Raleigh, NC
(Accessed May 7, 2025)
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New Optical Metrology at NIST for Semiconductor Lithography
Published
Author(s)
, ,
Abstract
Optical semiconductor lithography in the deep ultraviolet (DUV) and next generation lithographies such as extreme ultraviolet lithography (EUVL) create many new challenges for surface figure metrology. We discuss the needs for flatness metrology of silicon wafers and photomask blanks and how NIST is addressing these needs with two new optical testing interferometers, the NIST infrared interferometer (IR2) for measuring silicon wafers. The other is the XCALIBIR interferometer for the testing of flat, spherical, and aspheric optics.Conference Dates
April 17-18, 2002
Conference Location
Raleigh, NC
Conference Title
ASPE Conference - Progress in Precision
Pub Type
Conferences
Keywords
deep ultraviolet (DUV), Optical semiconductor lithography
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created April 17, 2002, Updated February 19, 2017