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New Optical Metrology at NIST for Semiconductor Lithography

Published

Author(s)

Ulf Griesmann, Tony L. Schmitz, Johannes A. Soons

Abstract

Optical semiconductor lithography in the deep ultraviolet (DUV) and next generation lithographies such as extreme ultraviolet lithography (EUVL) create many new challenges for surface figure metrology.  We discuss the needs for flatness metrology of silicon wafers and photomask blanks and how NIST is addressing these needs with two new optical testing interferometers, the NIST infrared interferometer (IR2) for measuring silicon wafers.  The other is the XCALIBIR interferometer for the testing of flat, spherical, and aspheric optics.
Conference Dates
April 17-18, 2002
Conference Location
Raleigh, NC
Conference Title
ASPE Conference - Progress in Precision

Keywords

deep ultraviolet (DUV), Optical semiconductor lithography

Citation

Griesmann, U. , Schmitz, T. and Soons, J. (2002), New Optical Metrology at NIST for Semiconductor Lithography, ASPE Conference - Progress in Precision, Raleigh, NC (Accessed June 21, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created April 17, 2002, Updated February 19, 2017