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Displaying 51 - 58 of 58

IGBT Half-Bridge Shoot-Through Characterization for Model Validation

December 31, 1996

Author(s)

David W. Berning, Allen R. Hefner Jr.

A circuit is described for making a variety of measurements on half-bridge Insulated Gate Bipolar Transistor (IGBT) pairs for validating IGBT models. The circuit incorporates two robust isolated gate drives for the IGBTs. Each IGBT is driven with an eight

Assessment of Reliability Concerns for Wide-Temperature Operation of Semiconductor Devices and Circuits

January 20, 1996

Author(s)

Joseph Kopanski, David L. Blackburn, George G. Harman, David W. Berning

Double-Modulation and Selective Excitation Photoreflectance for Wafer-Level Characterization of Quantum-Well Laser Structures

December 31, 1995

Author(s)

Deane Chandler-Horowitz, David W. Berning, Joseph G. Pellegrino, John H. Burnett, Paul M. Amirtharaj, D. P. Bour, D. W. Treat

Experimental Study of Reverse-Bias Failure Mechanisms in Bipolar Mode JFET (BMFET)

December 31, 1993

Author(s)

G. Busatto, David L. Blackburn, David W. Berning

An Automated Reverse-Bias Second-Breakdown Transistor Tester

December 31, 1991

Author(s)

David W. Berning

Assessment of Reliability Concerns for Wide-Temperature Operation of Semiconductor Devices and Circuits

December 31, 1991

Author(s)

Joseph Kopanski, David L. Blackburn, George G. Harman, David W. Berning

An Automated Reverse-Bias Second-Breakdown Transistor Tester

June 1, 1991

Author(s)

David W. Berning

Semiconductor Measurement Technology: A Programmable Reverse-Bias Safe Operating Area Transistor Tester

August 1, 1990

Author(s)

David W. Berning

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