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Search Publications by: Richard A. Allen (Fed)

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Displaying 176 - 200 of 269

Test Chip for Electrical Linewidth of Copper-Interconnection Features and Related Parameters

February 6, 2001
Author(s)
Michael W. Cresswell, N. Arora, Richard A. Allen, Christine E. Murabito, Curt A. Richter, Ashwani K. Gupta, Loren W. Linholm, D. Pachura, P. Bendix
This paper reports a new electrical test structure for measuring the barrier-layer thickness and total physical linewidth of copper-cored interconnect features. The test structure has four critical dimension (CD) reference segments of different drawn

A Novel Method for Fabricating CD Reference Materials with 100 nm Linewidths

December 31, 2000
Author(s)
Richard A. Allen, Loren W. Linholm, Michael W. Cresswell, Colleen E. Hood
A technique has been developed to fabricate 100-nm CD reference features with I-line lithography by utilizing a unique characteristic of single-crystal silicon-on-insulator films: Under certain etch conditions, the edges of features align to

Comparison of Electrical CD Measurements and Cross-Section Lattice-Plane Counts of Sub-Micrometer Features Replicated in (100) Silicon-on-Insulator Material

June 1, 2000
Author(s)
Michael W. Cresswell, John E. Bonevich, T J. Headley, Richard A. Allen, Lucille A. Giannuzzi, Sarah C. Everist, Rathindra Ghoshtagore, Patrick J. Shea
Test structures of the type known as cross-bridge resistors have been patterned in (100) epitaxial silicon material that was seeded on Bonded and Etched-Back silicon-on-Insulator (BESOI) substrates. The electrical CDs (Critical Dimensions) of a limited

Linewidth Measurement Intercomparison on a BESOI Sample

June 1, 2000
Author(s)
John S. Villarrubia, Andras Vladar, J R. Lowney, Michael T. Postek, Richard A. Allen, Michael W. Cresswell, Rathindra Ghoshtagore
The effect of the instrument on the measurement must be known in order to generate an accurate linewidth measurement. Although instrument models exist for a variety of techniques, how does one assess the accuracy of these models? Intercomparisons between

Analysis of Current Flow in Mono-Crystalline Electrical Linewidth Structures

June 1, 1999
Author(s)
S Smith, I. A. Lindsay, Anthony Walton, Michael W. Cresswell, Loren W. Linholm, Richard A. Allen, M. Fallon, Alan Gundlach
The current flow in lightly doped mono-crystalline silicon structures designed for use as low cost secondary reference linewidth standards is investigated. It is demonstrated that surface charge can have a significant effect upon the measurements of

Intercomparison of SEM, AFM, and Electrical Linewidths

June 1, 1999
Author(s)
John S. Villarrubia, Ronald G. Dixson, Samuel N. Jones, J R. Lowney, Michael T. Postek, Richard A. Allen, Michael W. Cresswell
Uncertainty in the locations of line edges dominates the uncertainty budget for high quality sub-micrometer linewidth measurements. For microscopic techniques like scanning electron microscopy (SEM) and atomic force microscopy (AFM), the image of the sharp