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Search Publications by: Richard A. Allen (Fed)

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Displaying 151 - 175 of 269

Recent Developments in Producing Test-structures for Use as Critical Dimension Reference Materials

March 1, 2004
Author(s)
Richard A. Allen, Ravi I. Patel, Michael W. Cresswell, Christine E. Murabito, Brandon Park, Monica D. Edelstein, Loren W. Linholm
NIST is developing Single-Crystal Critical-Dimension Reference Materials (SCCDRM) which address the need of the semiconductor and semiconductor equipment industries for a well-characterized artifact to serve as the basis for comparing the performance of

Interim Report on Single Crystal Critical Dimension Reference Materials (SCCDRM)

January 1, 2004
Author(s)
Ronald G. Dixson, Michael W. Cresswell, Richard A. Allen, William F. Guthrie, Brandon Park, Christine E. Murabito, Joaquin (. Martinez
The single crystal critical dimension reference materials (SCCDRM) project has been completed, and the samples for the SEMATECH member companies have been released for distribution. The final technology transfer report is currently undergoing revision and

Critical Dimension Calibration Standards for ULSI Metrology

September 30, 2003
Author(s)
Richard A. Allen, Michael W. Cresswell, Christine E. Murabito, Ronald G. Dixson, E. Hal Bogardus
NIST and International SEMATECH are developing single-crystal reference materials for use in evaluating and calibrating critical dimension (CD), that is linewidth, metrology tools. Primary calibration of these reference materials uses a high-resolution

Test Structures for Referencing Electrical Linewidth Measurements to Silicon Lattice Parameters Using HRTEM

May 1, 2003
Author(s)
Richard A. Allen, B A. am Ende, Michael W. Cresswell, Christine E. Murabito, T J. Headley, William F. Guthrie, Loren W. Linholm, Colleen E. Hood, E. Hal Bogardus
A technique has been developed to determine the linewidths of the features of a prototype reference material for the calibration of CD (Critical-Dimension) metrology instruments. The reference features are fabricated in mono-crystalline-silicon with the

CD Reference Materials for Sub-Tenth Micrometer Applications

June 1, 2002
Author(s)
Michael W. Cresswell, E. Hal Bogardus, Joaquin (. Martinez, Marylyn H. Bennett, Richard A. Allen, William F. Guthrie, Christine E. Murabito, B A. am Ende, Loren W. Linholm
Prototype linewidth reference materials with Critical Dimensions (CDs) as narrow as 70 nm have been patterned in (110) silicon-on-insulator films. The sidewalls of the reference features are parallel, normal to the substrate surface, and have almost

Test Structures for Referencing Electronics Linewidth Measurements to Silicon Lattice Parameters Using HRTEM

April 8, 2002
Author(s)
Richard A. Allen, Michael W. Cresswell, Christine E. Murabito, William F. Guthrie, Loren W. Linholm, Colleen E. Hood, E. Hal Bogardus
A technique has been developed to certify the linewidths of the features of a prototype reference materials for the calibration of CD (Critical-Dimension) metrology instruments. The reference features are fabricated in mono-crystalline-silicon with the

Measurement of the Linewidth of Electrical Test-Structure Reference Features by Automated Phase-Contrast Image Analysis

April 1, 2002
Author(s)
B A. am Ende, Michael W. Cresswell, Richard A. Allen, T J. Headley, William F. Guthrie, Loren W. Linholm, H Bogardus, Christine E. Murabito
NIST, Sandia National Laboratories, and International SEMATECH are developing a new type of linewidth standard for calibrating Critical Dimension (CD) metrology instruments for lithographic process control. The standard reference feature is the bridge of

CD Reference Materials for Sub-Tenth Micrometer Applications

March 1, 2002
Author(s)
Richard A. Allen, Michael W. Cresswell, William F. Guthrie, Loren W. Linholm, H Bogardus, J V. Martinez de pinillos, B A. Am ende, Christine E. Murabito, M H. Bennett
Prototype linewidth reference materials with Critical Dimensions (CDs) as narrow as 70 nm have been patterned in (110) silicon-on-insulator films. The sidewalls of the reference features are parallel, normal to the substrate surface, and have almost

Electrical CD Metrology and Related Reference Materials

June 1, 2001
Author(s)
Michael W. Cresswell, Richard A. Allen
In the fabrication of integrated circuits, the steps of depositing a thin film of conducting material, patterning it photo-lithographically, and then etching it and stripping the remaining resist, are repeated several times as required levels are created