April 18, 2010
Author(s)
J. J. Brown, A. I. Baca, Kristine A. Bertness, D. A. Dikin, R. S. Ruoff, Victor M. Bright
This paper reports the first direct tensile tests on nearly defect free, n-type (Si-doped) gallium nitride single crystal nanowires. Here, for the first time, nanowires have been integrated with actuated, active microelectromechanical (MEMS) structures