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Displaying 651 - 675 of 1314

Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices

July 1, 2006
Author(s)
Jose M. Ortiz-Rodriguez, Allen R. Hefner Jr., David W. Berning, Colleen E. Hood, S. Olcum
Silicon carbide (SiC) power devices have begun to emerge recently with a performance that is superior to that of silicon power devices. Therefore, the push to higher power and higher voltage applications also comes with it. This work addresses the need for

New reference standards and artifacts for nanoscale physical property characterization

July 1, 2006
Author(s)
Jon R. Pratt, John A. Kramar, Gordon Shaw, Richard Gates, Paul Rice, John M. Moreland
This paper provides an overview of calibration artifacts being developed at the National Institute of Standards and Technology (NIST) that are intended to aid the accurate determination of nanoscale physical properties across a broad range of applications

Reverse Noise Measurement and Use in Device Characterization

June 10, 2006
Author(s)
James P. Randa, Tom McKay, Susan L. Sweeney, Dave K. Walker, Lawrence Wagner, David R. Greenberg, Jon Tao, G. Ali Rezvani
We review the concept of reverse noise measurements in the context of on-wafer transistor noise characterization. Several different applications of reverse noise measurements are suggested and demonstrated. Reverse measurements can be used to check

10 kV, 5A 4H-SiC Power DMOSFET

May 1, 2006
Author(s)
Sei-Hyung Ryu, Sumi Krishnaswami, Hull Brett, James Richmond, Anant Agarwal, Allen R. Hefner Jr.
In this paper, we report 4H-SiC power DMOSFETs capable of blocking 10 kV. The devices were scaled up to 5 A, which is a factor of 25 increase in device area compared to the previously reported value. The devices utilized 100 υm thick n-type epilayers with

Status of High-Voltage, High-Frequency Silicon-Carbide Power Devices

March 22, 2006
Author(s)
Allen R. Hefner Jr.
The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power

Precision Measurement Method for Cryogenic Amplifier Noise Temperatures Below 5 K

March 1, 2006
Author(s)
James P. Randa, Eyal Gerecht, Dazhen Gu, Robert L. Billinger
We report precision measurements of the effective input noise temperature of a cryogenic (liquid helium temperature) MMIC amplifier at the amplifier reference planes within the cryostat. A method is given for characterizing and removing the effect of the

Reliability and Performance Limitations in SiC Power Devices

December 27, 2005
Author(s)
Ranbir Singh, Allen R. Hefner Jr.
Despite Silicon Carbide's (SiC's) high breakdown electric field, high thermal conductivity and wide bandgap, it faces certain reliability challenges when used to make conventional power device structures like power MOS-based devices, bipolar-mode diodes

Electromagnetic Signatures of WLAN Cards and Network Security

December 21, 2005
Author(s)
Catherine A. Remley, Chriss A. Grosvenor, Robert T. Johnk, David R. Novotny, Paul D. Hale, Michael McKinley, Emmanouil Antonakakis, A Karygiannis
The proliferation of wireless devices and the availability of new wireless applications and services raise new privacy and security concerns. Although network-layer anonymity protects the identities of the communication endpoints, the physical layer of

INTER-LABORATORY COMPARISON OF NOISE-PARAMETER MEASUREMENTS ON CMOS DEVICES WITH 0.12 um GATE LENGTH

December 1, 2005
Author(s)
James P. Randa, Susan L. Sweeney, Tom McKay, Dave K. Walker, David R. Greenberg, Jon Tao, Judah Mendez, G. Ali Rezvani, John J. Pekarik
We present results of an interlaboratory comparison of S-parameter and noise-parameter measurements performed on 0.12 υm gate-length CMOS transistors. Copies of the same device were measured at three different laboratories (IBM, NIST, RFMD), and the

Comparison of Gains Determined from the Extrapolation and Pattern Integration Methods

October 30, 2005
Author(s)
Michael H. Francis, Katherine MacReynolds, Jeffrey R. Guerrieri
Scientists at the National Institute of Standards (NIST) have measured the gain of several antennas using two different methods. The first method is the three-antenna extrapolation method developed at NIST in the early 1970s. The second method is the
Displaying 651 - 675 of 1314
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