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Displaying 52401 - 52425 of 74036

Critical Compilation of Atomic Wavelength and Energy Level Data

April 1, 1998
Author(s)
William C. Martin, J Sugar, Arlene Musgrove, Craig J. Sansonetti, Jean E. Sansonetti, Edward B. Saloman, V I. Azarov, Alexander Kramida, A N. Ryabtsev, T Shirai
The Atomic Energy Levels Data Center at the National Institute of Standards and Technology (NIST), in cooperation with other laboratories indicated above, is critically evaluating and compiling energy levels, wavelengths, and energy level classifications

Fracture Toughness Data for Brittle Materials

April 1, 1998
Author(s)
R G. Munro, Stephen W. Freiman, T L. Baker
Fracture toughness data, as represented by the critical stress intensity factor, K Ic, and the fracture energy, γ, have been compiled from publicly accessible sources for a wide range of brittle materials with an emphasis on structural ceramics and closely

Friend or Foe? Communication Gateways

April 1, 1998
Author(s)
Steven T. Bushby
Gateways play an important role in integrating building automation system components made by different manufacturers. This article explores the role gateways play in this application and describes benefits and limitations that need to be considered by

H-Out-Diffusion and Device Performance In n-i-p Solar Cells Utilizing High Temperature Hot Wire a si: H i-Layers

April 1, 1998
Author(s)
A. H. Mahan, R C. Reedy, E Iwaniczko, Q Wang, B P. Nelson, Y Xu, Alan Gallagher, H M. Branz, J Crandall, J Yang, S Guha
Hydrogen out-diffusion from the n/i interface region plays a major role in controlling the fill factor (FF) and resultant efficiency of n-i-p a-Si: H devices, with the i-layer deposited at high substrate temperatures by the hot wire technique. Modeling
Displaying 52401 - 52425 of 74036
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