The Correlation of Highly Accelerated Qbd Tests to TDDB Life Tests for Ultra-Thin Gate Oxides
Y Chen, John S. Suehle, Chien-Chung Shen, J B. Bernstein, C. Messick, P Chaparala
A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant or ramped current injection breakdown tests. It is demonstrated that an accurate correlation of highly accelerated breakdown tests to long-term constant voltage TDDB tests can be obtained.
Proc., 1998 International Reliability Physics Symposium
, Suehle, J.
, Shen, C.
, Bernstein, J.
, Messick, C.
and Chaparala, P.
The Correlation of Highly Accelerated Q<sub>bd</sub> Tests to TDDB Life Tests for Ultra-Thin Gate Oxides, Proc., 1998 International Reliability Physics Symposium, Reno, NV, USA
(Accessed December 9, 2023)