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The Correlation of Highly Accelerated Qbd Tests to TDDB Life Tests for Ultra-Thin Gate Oxides

Published

Author(s)

Y Chen, John S. Suehle, Chien-Chung Shen, J B. Bernstein, C. Messick, P Chaparala

Abstract

A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant or ramped current injection breakdown tests. It is demonstrated that an accurate correlation of highly accelerated breakdown tests to long-term constant voltage TDDB tests can be obtained.
Proceedings Title
Proc., 1998 International Reliability Physics Symposium
Conference Dates
March 30-April 2, 1998
Conference Location
Reno, NV, USA

Keywords

oxide reliability, silicon dioxide, time-dependent dielectric breakdown

Citation

Chen, Y. , Suehle, J. , Shen, C. , Bernstein, J. , Messick, C. and Chaparala, P. (1998), The Correlation of Highly Accelerated Q<sub>bd</sub> Tests to TDDB Life Tests for Ultra-Thin Gate Oxides, Proc., 1998 International Reliability Physics Symposium, Reno, NV, USA (Accessed June 19, 2024)

Issues

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Created May 31, 1998, Updated October 12, 2021