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Toward a Unified Advanced CD-SEM Specification for Sub 0.18 Micrometer Technology



J Allgair, C Archie, W Banke, H Bogardus, J Griffith, H Marchman, Michael T. Postek, L Saraf, J Schlesinger, B Singh, N. Sullivan, L Trimble, Andras Vladar, A Yanof


The stringent critical dimension (CD) control requirements in cutting edge device facilities have placed significant demands on metrologists and upon the tools they use. We are developing a unified, advanced critical dimension scanning electron microscope (CD-SEM) specification in the interests of providing a unified criterion of performance and testing. The specification is grounded on standard definitions and strong principles of metrology. The current revision is to be published as a SEMATECH document. A new revision, now in progress, will embody the consensus of a vendor/user conference.
Proceedings Title
Proceedings of SPIE
Conference Dates
February 23, 1998
Conference Location
Santa Clara, CA, USA
Conference Title
Metrology, Inspection, and Process Control for Microlithography XII, Bhanwar Singh, Editor


accuracy, charging, contamination, critical dimension, metrology, pattern recotnition, precision, scanning electron microscope, specification


Allgair, J. , Archie, C. , Banke, W. , Bogardus, H. , Griffith, J. , Marchman, H. , Postek, M. , Saraf, L. , Schlesinger, J. , Singh, B. , Sullivan, N. , Trimble, L. , Vladar, A. and Yanof, A. (1998), Toward a Unified Advanced CD-SEM Specification for Sub 0.18 Micrometer Technology, Proceedings of SPIE, Santa Clara, CA, USA (Accessed June 16, 2024)


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Created May 31, 1998, Updated October 12, 2021