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Displaying 45626 - 45650 of 74186

FEA Modeling and Hardness Performance Prediction of Rockwell Diamond Indenters

July 1, 2001
Author(s)
Hui Zhou, Jun-Feng Song, Samuel Low, Li Ma
The difficulty in manufacturing Rockwell diamond indenters to the required geometric specifications has resulted in most commercially manufactured indenters to vary in shape from one indenter to another. This difference in shape is thought to be a major

FEA Modeling and Hardness Performance Prediction of Rockwell Diamond Indenters

July 1, 2001
Author(s)
Li Ma, J Zhou, Samuel R. Low III, Jun-Feng Song
The difficulty in manufacturing Rockwell diamond indenters to the required geometric specifications has resulted in most commercially manufactured indenters to vary in shape from one indenter to another. This difference in shape is thought to be a major

From Stars to Spheres: A SAXS Analysis of Dilute Dendrimer Solutions

July 1, 2001
Author(s)
T J. Prosa, Barry J. Bauer, Eric J. Amis
The progression of intramolecular organizations within a series of dilute poly(amino amine) (PAMAM) dendrimer/methanol solutions is examined by use of small angle x-ray scattering (SAXS) combined with comparisons to various electron density models. The

High Frequency Measurements of CoFeHfO Thin Films

July 1, 2001
Author(s)
Stephen E. Russek, Pavel Kabos, Thomas J. Silva, Fred B. Mancoff, D Wang, Z. T. Qian, J. M. Daughton
High frequency measurements of the transverse susceptibility and damping constant of CoFeHfo thin films have been made over a frequency range of 0.1 GHz to 6 GHz as a function of film resistivity, thickness, and temperature. The films show relatively low

Improved Characterization of Elastic Scattering Near a Feshbach Resonance in 85 Rb

July 1, 2001
Author(s)
J L. Roberts, N R. Claussen, S L. Cornish, E A. Donley, C E. Wieman
We report extensions and corrections to the measurement of the Feshbach resonance in 85Rb cold atom collisions reported earlier (J.L. Roberts et al., Phys. Rev. Lett. 81, 5109 (1998)). In addition to a better determination of the position of the resonance

Isotopic Ratio Measurements by Time-of-Flight Secondary Ion Mass Spectrometry

July 1, 2001
Author(s)
Albert J. Fahey, S R. Messenger
Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) is often considered synonymous with SIMS in the static limit where the ion fluence on the sample surface is so low that damage is negligible. For this same reason its use in measuring isotopic

Luminous Intensity Calibrations and Colorimetry of LEDs at NIST

July 1, 2001
Author(s)
Carl C. Miller, Yoshihiro Ohno
Light Emitting Diodes (LEDs) are unique light sources differing greatly from traditional lamps in terms of physical size, flux level, spectrum and spatial distribution. The transfer of photometric scales from luminous intensity standard lamps to LEDs is

Magnetoelectronic Devices Using a-Fe 2 O 3 Bottom GMR Spin-Valves

July 1, 2001
Author(s)
S Bae, S Zurn, William F. Egelhoff Jr., P J. Chen, L Sheppard, E J. Torok, J H. Judy
The characteristics of a magnetoresistive random access memory (MRAM) and a giant magnetoresistive (GMR) transpinnor, which is an active solid-state device, have been investigated using α-Fe 2O 3 bottom GMR spin-valves. Patterned α-Fe 2O 3 bottom GMR spin

Mass Flow Research and Standards: NIST Workshop Results

July 1, 2001
Author(s)
Robert F. Berg, David S. Green, G E. Mattingly
A recent workshop at the National Institute of Standards and Technology (NIST) identified research and standards that will benefit users and manufacturers of mass flow controllers and related equipment. The workshop identified problems with flow

Micromechanical Torque Magnetometer for In Situ Thin-film Measurements

July 1, 2001
Author(s)
John M. Moreland, Albrecht Jander, James A. Beall, Pavel Kabos, Stephen E. Russek
We describe a new type of magnetometer based on a microelectromechanical system (MEMS) for in situ monitoring of magnetic film moment during the film deposition process. The magnetometer measured mechanical torque on a film as it is deposited onto a

Modeling Technology for a Model-Intensive Enterprise

July 1, 2001
Author(s)
Michael Gruninger, David W. Flater, Peter O. Denno
The Object Management Group (OMGtm) is defining specifications supporting a modeling environment that permits models from a family of modeling languages to populate a repository. In that environment, mechanisms that give coherence to the collection of

Molecular Dynamics Study of Thin Water-Acetonitrile Films

July 1, 2001
Author(s)
Raymond D. Mountain
Molecular dynamics simulations are used to generate the composition and orientation profiles for thin, water-acetontitrile films. The liquid-vapor interfaces of the films are found to be acetonitrile rich, even for low acetonitrile concentrations. For low

MOS Device Characterization

July 1, 2001
Author(s)
Eric M. Vogel, Veena Misra
This chapter provides a survey and discussion of the electrical characterization techniques commonly used to determine the material, performance, and reliability properties of state-of-the-art metal-oxide-semiconductor (MOS) devices used in silicon

Multiparameter Equations of State - Recent Trends and Future Challenges

July 1, 2001
Author(s)
R Span, Wolfgang Wagner, Eric Lemmon, R Jacobsen
The purpose of this article is to update the common knowledge on characteristic features of empirical multi-parameter equations of state, to increase the confidence of potential users, and possibly to attract other scientists to theoretical and
Displaying 45626 - 45650 of 74186
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