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Search Publications

NIST Authors in Bold

Displaying 44926 - 44950 of 73697

Tensile Properties of Free-Standing Aluminum Thin Films

September 1, 2001
Author(s)
David T. Read, Yi-Wen Cheng, R R. Keller, Joseph D. McColskey
Tensile properties of electron-beam-deposited free-standing aluminum thin films were measured. High ς y and UTS were observed, mainly due to fine grain sizes, consistent with values reported in the literature. The observed Young's modulus, as measured by

The Next Step- IEEE 1451 Smart Sensor Networks

September 1, 2001
Author(s)
M R. Moore, Kang B. Lee, SM F. Smith
IEEE 1451 is a family of standards that links sensors to users, similar to the way that IEEE 802 (Ethernet) provides connectivity for information systems. Currently, all working groups under the IEEE 1451 umbrella provide standard interfaces for sensors on

The Next Step- IEEE 1451 Smart Sensor Networks Go Wireless

September 1, 2001
Author(s)
M R. Moore, S Smith, Kang B. Lee
IEEE 1451 is a family of standards that links sensors to users, similar to the way that IEEE 802 (Ethernet) provides connectivity for information systems. Currently, all working groups under the IEEE 1451 umbrella provide standard interfaces for sensors on

The Performance of a Nanocrystalline Tungsten Composite in Ballistic Impacts

September 1, 2001
Author(s)
L S. Magness, L Kesckes, Frank S. Biancaniello, Stephen D. Ridder, M Chung, D Kapoor
A novel tungsten heavy alloy with a nanocrystalline microstructure was produced. Tungsten powders were ball milled in a controlled atmosphere environment, with rapidly solidified powders of a binder alloy known to exhibit a stress-induced martensitic

The Stability of Nb/Nb 5 Si 3 Microlaminates at High Temperatures

September 1, 2001
Author(s)
D van Heerden, A J. Gavens, P R. Subramanian, Timothy J. Foecke, Timothy P. Weihs
The chemical, phase and microstructural stability of Nb/Nb 5Si 3 microlaminates was investigated at temperatures ranging from 1200 C to 1600 C. The microlamintes were vapor deposited at room temperature and subsequently annealed at 1200 C to crystallize

Using the Nose-to-nose Sampler Calibration Method in Pulse Metrology

September 1, 2001
Author(s)
Donald R. Larson, Nicholas Paulter
We present our analysis of the nose-to-nose (ntn) method for use as an accurate sampler calibration method. The variations in the measurement of the sampler impulse response using the ntn method are described and the assertion that the kick-out pulse is

Wavelength Calibration Standards for the WDM L-Band

September 1, 2001
Author(s)
William C. Swann, Sarah L. Gilbert
We describe National Institute of Standards and Technology research on wavelength standards for the optical communications L-band. We are developing a pair of transfer standards that can be used to calibrate the wavelength scale and scan linearity of

Workshop on Standards for Biomedical Materials and Devices

September 1, 2001
Author(s)
John A. Tesk, D Hall
The Workshop on Biomedical Materials and Devices, held June 13-14, 2001, is the latest in a series of workshops and topical meetings organized by NIST in the area of biomedical technology. The workshop complements other recent NIST efforts to make its

X-Ray Standing-Wave Investigation of Valence-Electronic Structure

September 1, 2001
Author(s)
Joseph C. Woicik, E J. Nelson, T Kendelewicz, P Pianetta, D Heskett, J Warner, L E. Berman, B A. Karlin, I A. Vartanyants, M Z. Hasan, Z -. Shen
We introduce a new experiment method by which site-specific valence-electronic structure may be obtained. It utilizes the x-ray standing-wave interference field that results from the superposition of the incident and reflected x-ray beams within the

X-Ray Standing-Wave Investigations of Valence Electronic Structure

September 1, 2001
Author(s)
Joseph C. Woicik, E J. Nelson, D Heskett, J Warner, L E. Berman, B A. Karlin, I A. Vartanyants, M Z. Hasan, T Kendelewicz, Z -. Shen, P Pianetta
We have examined the valance-electron emission from Cu, Ge, GaAs, InP, and NiO single crystals under the condition of strong x-ray Bragg reflection; i.e., in the presence of the spatially modulated x-ray standing-wave interference field that is produced by

Improved Time-Base for Waveform Parameter Estimation

August 31, 2001
Author(s)
Bryan C. Waltrip, Owen B. Laug, Gerard N. Stenbakken
An improved gated oscillator time-base and associated auto-calibration algorithm for use in a high-accuracy waveform acquisition system are descrigbed. The time-base architecture consists of a stable 100 MHz gated oscillator, 24-bit counter chain, and a

Implementation of CMOS Compatible Conductance-based Micro-Gas-Sensor System

August 28, 2001
Author(s)
Muhammad Afridi, John S. Suehle, Mona E. Zaghloul, Jason E. Tiffany, Richard E. Cavicchi
A CMOS compatible micro-gas sensor system was designed and fabricated in a standard CMOS process through MOSIS. This chip was post-processed to create microhotplates using bulk micro-machining techniques. Tin-oxide-sensing films were grown over post

High Q resonating cantilevers for in situ measurements of ferromagnetic films

August 24, 2001
Author(s)
John M. Moreland, T. J. Hubbard
We describe micro cantilevers developed for in-situ measurements of ultra-thin ferromagnetic films. The cantilevers are optimized for use in a resonating torque micro-balance magnetometer that measures the magnetic moment of thin films as they are being

Spin-Other-Orbit Interaction and Magnetocrystalline Anisotropy

August 23, 2001
Author(s)
Mark D. Stiles, S Halilov, R Hyman, A Zangwill
We report the effect of the two-body, spin-other-orbit interaction on the magnetocrystalline anisotropy energy of the 3d transition metals. The relevant energy differences were computed for bcc Fe, fcc Ni, and hcp Co using the linearized augmented plane

Haidinger Interferometer for Silicon Wafer TTV Measurement

August 22, 2001
Author(s)
R E. Parks, L Z. Shao, Angela Davies, Christopher J. Evans
We describe a novel configuration for a Haidinger fringe, phase shifting, interferometer to measure the total thickness variation (TTV) of 300mm silicon wafers. The interferometer has only one optical element that is on the order of the size of the wafer
Displaying 44926 - 44950 of 73697
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