Implementation of CMOS Compatible Conductance-based Micro-Gas-Sensor System

Published

August 28, 2001

Author(s)

Muhammad Afridi, John S. Suehle, Mona E. Zaghloul, Jason E. Tiffany, Richard E. Cavicchi

Abstract

A CMOS compatible micro-gas sensor system was designed and fabricated in a standard CMOS process through MOSIS. This chip was post-processed to create microhotplates using bulk micro-machining techniques. Tin-oxide-sensing films were grown over post-patterned gold sensing electrodes using a low-pressure chemical vapor deposition (CVD) technique. The thermal properties of the microhotplates include a one-millisecond thermal time constant and a 10 ^OC/mW thermal efficiency. The microhotplate operates at temperatures between 20 ^OC - 450 ^OC. Tin-oxide-sensing films were isothermally characterized using different gas molecules and concentrations. This paper describes the fabrication, characterization, and design of interface circuitry of a novel CMOS integrated micro-gas-sensor system.

Proceedings Title

Proc., ECCTD'01

Conference Dates

August 28-31, 2001

Conference Location

Espoo, 1, FI

Conference Title

European Conference on Circuit Theory and Design

Pub Type

Conferences

Keywords

CMOS, MEMS gas sensor, microhotplate, thin films, gas sensor

Citation

Afridi, M. , Suehle, J. , Zaghloul, M. , Tiffany, J. and Cavicchi, R. (2001), Implementation of CMOS Compatible Conductance-based Micro-Gas-Sensor System, Proc., ECCTD'01, Espoo, 1, FI (Accessed October 11, 2025)