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Search Publications

NIST Authors in Bold

Displaying 31826 - 31850 of 73697

Spring constant calibration of AFM cantilevers with a piezosensor transfer standard

September 24, 2007
Author(s)
Eric Langlois, Gordon A. Shaw, John A. Kramar, Jon R. Pratt, Donna C. Hurley
We describe a method to calibrate the spring constants of cantilevers for atomic force microscopy (AFM). The method makes use of a piezosensor comprised of a piezoresistive cantilever and accompanying electronics. The piezosensor was calibrated before use

Transport quantum logic gates for trapped ions

September 21, 2007
Author(s)
Dietrich G. Leibfried, Emanuel H. Knill, Christian Ospelkaus, David J. Wineland
Many efforts are currently underway to build a device capable of large scale quantum information processing (QIP). While QIP has been demonstrated for a few qubits in several systems, severe difficulties have to be overcome in order to construct a large

Evaluating a Ranging Protocol For 3D Imaging Systems

September 19, 2007
Author(s)
Geraldine S. Cheok, Kamel S. Saidi, Alan M. Lytle
In 2006, the ASTM E57 committee was established to develop standards for 3D imaging systems. A 3D imaging system is a non-contact instrument that is used to measure the range and bearing to and/or the 3D coordinates of points on an object or within a

Feasibility of Using a Concrete Mixing Truck as a Rheometer(Orlando, Florida)

September 19, 2007
Author(s)
Chiara F. Ferraris, Roy Cooley, Joe Grein, Max A. Peltz, Michael Topputo, Steve Verdino
The goal of the tests reported here was to further determine the feasibility of using a concrete mixing truck as a rotational rheometer. This work is the continuation of preliminary tests [ , ] that seemed to indicated that the yield stress and the plastic

Simplified motional heating rate measurements of trapped ions

September 19, 2007
Author(s)
Ryan Epstein, Signe Seidelin, Dietrich G. Leibfried, Janus Wesenberg, John J. Bollinger, Jason Amini, Brad R. Blakestad, Joseph W. Britton, Jonathan Home, Wayne M. Itano, John D. Jost, Emanuel H. Knill, C. Langer, R. Ozeri, Nobuyasu Shiga, David J. Wineland
We measure motional heating rates of trapped atomic ions, a factor that influences multi-ion quantum logic gate fidelities. Two simplified techniques are developed for this purpose: one relies on Raman sideband detection implemented with a single laser

Guided Data Capture (GDC) 5.0

September 17, 2007
Author(s)
Vladimir Diky, Robert D. Chirico, Robert N. Goldberg, Michael D. Frenkel
Guided Data Capture (GDC) 5.0 includes capture capabilities for biochemical substances and selected biothermodynamic properties. A key characteristic of data capture for much biothermodynamic data arises from the need to fully specify relatively complex

Nanowire placement with ink jet heads

September 16, 2007
Author(s)
Kristine A. Bertness, Christopher M. Dodson, Paul T. Blanchard, Norman Sanford, Ross N. Mills
We show that thermal ink jet printheads can be used to place GaN nanowires on patterned substrates. The semiconductor nanowires have diameters ranging from 70 to 300 nm and lengths from 5 υm to 20 υm. They were dispersed in alcohol-water solutions for

Nucleation and propagation mechanisms for catalyst-free growth of GaN nanowires

September 16, 2007
Author(s)
Kristine A. Bertness, Devin M. Rourke, Alexana Roshko, Lorelle Mansfield, Aric W. Sanders, Todd E. Harvey, Norman A. Sanford
Nucleation of GaN nanowires without catalysts in molecular beam epitaxy is shown to be a distinct process from nanowire propagation. Nanowire growth is relatively insensitive to starting conditions once the nanowire morphology is established, and is driven

Persistent photoconductivity studies of c-axis GaN nanowires grown by MBE

September 16, 2007
Author(s)
Norman Sanford, Paul T. Blanchard, Kristine A. Bertness, Alexana Roshko, Beau Burton, Lorelle Mansfield, John B. Schlager, Steven George, Aric Sanders
Photoconductivity (PC) and persistent photoconductivity (PPC) were measured on c-axis GaN nanowires (NWs) grown by catalyst-free nitrogen plasma assisted MBE on Si(111) substrates. Unintentionally doped n-type NWs from two separate growth batches were

Time-resolved photoluminescence study of GaN nanowires grown by catalyst-free MBE

September 16, 2007
Author(s)
John B. Schlager, Kristine A. Bertness, Paul T. Blanchard, Norman A. Sanford
We report steady-state and time-resolved photoluminescence (PL & TRPL) measurements on individual GaN nanowires that were grown by nitrogen-plasma-assisted, molecular beam epitaxy on Si(111) and subsequently dispersed onto fused quartz substrates for
Displaying 31826 - 31850 of 73697
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