September 15, 2020
Author(s)
Anthony McFadden, Aranya Goswami, Michael Seas, Corey Rae McRae, Ruichen Zhao, David P. Pappas, Christopher J. Palmstrom
… have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor substrates and bonded to silicon and sapphire. Selective etching is used to remove the III-V substrate followed by surface cleaning and …