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Displaying 726 - 750 of 1910

Real-time liquid-phase organic reaction monitoring with a mid-infrared dual frequency comb spectrometer

January 10, 2019
Author(s)
Daniel I. Herman, Eleanor M. Waxman, Gabriel G. Ycas, Fabrizio R. Giorgetta, Nathan R. Newbury, Ian R. Coddington
We combine high-resolution mid-infrared dual-comb spectroscopy with attenuated total reflectance measurements to provide in-situ monitoring of a chemical reaction. The mid-infrared dual-comb spectrometer measures quantitative absorption cross-sections of

Kinetic Mechanism of 2,3,3,3-Tetrafluoropropene (HFO-1234yf) Combustion

July 16, 2018
Author(s)
Valeri I. Babushok, Gregory T. Linteris
A kinetic model for 2,3,3,3-tetrafluoropropene (HFO-1234yf) high temperature oxidation and combustion is proposed. It is combined with the GRI-Mech-3.0 model, with the previously developed model for 2-bromo-3,3,3-trifluoropropene (2-BTP), and with the NIST

High-Resolution Local Current Measurement of CdTe Solar Cells

October 4, 2012
Author(s)
Heayoung Yoon, Dmitry A. Ruzmetov, Paul M. Haney, Marina S. Leite, Behrang H. Hamadani, Albert A. Talin, Nikolai B. Zhitenev
… by an acceleration voltage of electron beam (1 kV – 30 kV) in a scanning electron microscope (SEM), and the …

Efficient quantum dot single photon extraction into an optical fiber using a nanophotonic directional coupler

September 19, 2011
Author(s)
Marcelo I. Davanco, Matthew T. Rakher, W. Wegscheider, Dieter Schuh, Antonio Badolato, Kartik A. Srinivasan
We demonstrate a spectrally broadband and efficient technique for collecting photoluminescence from a single InAs quantum dot directly into a standard single mode optical fiber. In this approach, an optical fiber taper waveguide is placed in contact with a

Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment.

August 27, 2008
Author(s)
Nhan V. Nguyen, Oleg A. Kirillov, Weirong Jiang, Wenyong Wang, John S. Suehle, P. D. Ye, Y. Xuan, N. Goel, Kwang-Woo Choi, Wilman Tsai
In this letter we report the band offsets of the Al/Al2O3/GaAs structure determined by internal photoemission and spectroscopic ellipsometry. The energy barrier height at the Al2O3 and sulfur-passivated GaAs interface is found to be 3.0 eV, which is

Surface Effects on the Elastic Modulus of Te Nanowires

June 17, 2008
Author(s)
Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Mark D. Vaudin, Leonid A. Bendersky, Robert F. Cook
… doubling of the modulus for Te nanowires thinner than 30 nm. A model based on surface stiffening describes the …

New Guidelines for d13C Measurements

April 1, 2006
Author(s)
T Coplen, W A. Brandt, M Gehre, Manfred Groning, HAJ Meijer, Blaza Toman, Jennifer R. Verkouteren
… some have been notably shifted:the 13C of NBS 22 oil is -30.03 . …
Displaying 726 - 750 of 1910
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