Koppinen, P.
, Stewart, M.
and Zimmerman, N.
(2012),
Fabrication and Electrical Characterization of Fully CMOS Si Single Electron Devices, Journal of Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=911577
(Accessed October 10, 2024)
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Fabrication and Electrical Characterization of Fully CMOS Si Single Electron Devices
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Abstract
We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition, the devices exhibit robust transistor characteristics including uniformity within about 0.25 V in the threshold voltage, gate resistances greater than 10 GΩ, and immunity to dielectric breakdown in electric fields as high as 4 MV/cm. These results highlight the benefits in device performance of a fully CMOS process for single electron device fabricationCitation
Journal of Applied Physics
Pub Type
Journals
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Keywords
Coulomb blockade, single electron tunneling, quantum dots, electronic transport, mesoscopic systems
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Created December 18, 2012, Updated October 12, 2021