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Displaying 926 - 950 of 2904

Arsenic and Antimony Implantations in SiC

October 12, 2021
Author(s)
J R. Tucker, M Rao, O W. Holland, P Chi, N A. Papanicolaou, J A. Freitas
… at room temperature (RT) and 800 degrees C. Secondary ion mass spectrometry measurements showed severe … implantation, Rutherford back scattering, secondary ion mass spectrometry, silicon carbide …

On Walking in the Footprints of Giants

March 1, 2010
Author(s)
Marilyn E. Jacox
This chapter tells of a lifelong fascination with light, a messenger bearing information from realms ranging from the galactic to the submicroscopic. Personal interactions have shaped and informed this life journey. Accounts of some of the most important

Frequency ratio of Al + and Hg + single-ion optical clocks; metrology at the 17th decimal place

March 6, 2008
Author(s)
Till P. Rosenband, David Hume, P. O. Schmidt, Chin-Wen Chou, Anders Brusch, Luca Lorini, Windell Oskay, Robert E. Drullinger, Tara M. Fortier, Jason Stalnaker, Scott A. Diddams, Nathan R. Newbury, W Swann, Wayne M. Itano, David J. Wineland, James C. Bergquist
… Frequency ratio of Al + and Hg + single-ion optical clocks; metrology at the 17th decimal place …

Atomic Hydrogen for the Formation of Abrupt Sb Doping Profiles in MBE-Grown Si

May 1, 1998
Author(s)
P E. Thompson, C Silvestre, M E. Twigg, G Jernigan, David S. Simons
… reducing the segregation of Sb on Si[100]. Using secondary ion mass spectrometry, we demonstrated that the co-deposition … atomic hydrogen, molecular beam epitaxy, secondary ion mass spectrometry, silicon, surfactant-assisted growth …
Displaying 926 - 950 of 2904
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