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Arsenic and Antimony Implantations in SiC



J R. Tucker, M Rao, O W. Holland, P Chi, N A. Papanicolaou, J A. Freitas


Single and multiple energy As and Sb implantations were performed into p-type 6H-SiC epitaxial layers at room temperature (RT) and 800 degrees C. Secondary ion mass spectrometry measurements showed severe out-diffusion of the implants for annealing temperatures >1500 degrees C. Rutherford backscattering spectrometry (RBS) measurements indicated a high degree of residual lattice damage for RT implantations even after 1600 degrees C annealing while less damage was detected in 800 degrees C implanted samples. Electrical activations of 11% and 20% were measured for 800 degrees C As and Sb implantations annealed at 1500 degrees C, respectively. The Schottky capacitance-voltage profiling measurements indicated solid solubility limits in the low 1018 cm-3 range for both As and Sb. Based on the experimental data, carrier ionization energies of 80 meV and 67 meV were estimated for As and Sb donors, respectively. Vertical n-p junction diodes were made by using multiple energy As and Sb implanted epitaxial layers. The diodes were characterized by variable temperature current-voltage measurements.
Journal of Applied Physics


implantation, Rutherford back scattering, secondary ion mass spectrometry, silicon carbide


Tucker, J. , Rao, M. , Holland, O. , Chi, P. , Papanicolaou, N. and Freitas, J. (2021), Arsenic and Antimony Implantations in SiC, Journal of Applied Physics (Accessed March 5, 2024)
Created October 12, 2021