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Physics

Electron physics

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Displaying 1 - 25 of 111

Optical Spintronics in Organic-Inorganic Perovskites Photovoltaics

April 25, 2016
Author(s)
Junwen Li, Paul M. Haney
Organic-inorganic halide CH 3NH 3PbI 3 solar cells have attracted enormous attention in recent years due to their remarkable power conversion efficiency. These materials should exhibit interesting spin-dependent properties as well, owing to the strong spin

Virtual rough samples to test 3D nanometer-scale SEM stereo photogrammetry

March 22, 2016
Author(s)
John S. Villarrubia, Vipin N. Tondare, Andras Vladar
The combination of SEM for high spatial resolution, images from multiple angles to provide 3D information, and commercially available stereo photogrammetry software for 3D reconstruction offers promise for dimensional metrology in 3D. A method is described

Engineering Near-Field SEIRA Enhancements in Plasmonic Resonators

January 20, 2016
Author(s)
Jungseok Chae, Basudev Lahiri, Andrea Centrone
Engineering of the optical resonances in plasmonic resonators arrays is achieved by virtue of the intrinsic properties to the constituent structures such as composition, size and shape and by controlling the inter-resonator interactions by virtue the array

Scanning electron microscope measurement of width and shape of 10 nm patterned lines using a JMONSEL-modeled library

July 1, 2015
Author(s)
John S. Villarrubia, Andras Vladar, Bin Ming, Regis J. Kline, Daniel F. Sunday, Jasmeet Chawla, Scott List
The width and shape of 10 nm to 12 nm wide lithographically patterned SiO2 lines were measured in the scanning electron microscope by fitting the measured intensity vs. position to a physics-based model in which the lines’ widths and shapes are parameters

3D Monte Carlo modeling of the SEM: Are there applications to photomask metrology?

October 23, 2014
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
The ability to model the effect of fields due to charges trapped in insulators with floating conductors has been added to JMONSEL (Java Monte Carlo simulator for Secondary Electrons) and applied to a simple photomask metal on glass geometry. These

Nanoscale Imaging of Photocurrent and Efficiency in CdTe Solar Cells

October 15, 2014
Author(s)
Leite Marina, maxim abashin, Henri Lezec, anthony gianfrancesco, Alec Talin, Nikolai Zhitenev
The local collection characteristics of grain interiors and grain boundaries in thin film CdTe polycrystalline solar cells are investigated using scanning photocurrent microscopy. The carriers are locally generated by light injected through a small

Absolute pulse energy measurements of soft x-rays at the Linac Coherent Light Source

August 25, 2014
Author(s)
Uwe Arp, Alexander Sorokin, Ulf Jastrow, Pavle Jurani?, Svea Kreis, Mathias Richter, Yiping Feng, Dennis Nordlund, Kai Tiedtke, Philip Heimann, Bob Nagler, Hae Ja Lee, Stephanie Mack, Marco Cammarata, Oleg Krupin, Marc Messerschmidt, Michael Holmes , Michael Rowen, William Schlotter, Stefan Moeller, Joshua Turner
This paper reports novel measurements of x-ray optical radiation on an absolute scale from a recently developed source of radiation generated in the soft x-ray regime of a free electron laser. We give a brief description of the physics behind the

Interface scattering in polycrystalline thermoelectrics

March 24, 2014
Author(s)
Adrian Popescu, Paul M. Haney
We study the effect of electron and phonon interface scattering on the thermoelectric properties of disordered, polycrystalline materials (with grain sizes larger than electron and phonons' mean free path). Interface scattering of electrons is treated with

Current-induced torques and interfacial spin-orbit coupling

December 19, 2013
Author(s)
Kyung-Jin Lee, H.-W. Lee, Aurelien Manchon, Mark D. Stiles, Paul M. Haney
In bilayer systems consisting of an ultrathin ferromagnetic layer adjacent to a metal with strong spin-orbit coupling, an applied in-plane current induces torques on the magnetization. The torques that arise from spin-orbit coupling are of particular

Dirac fermion heating, current scaling, and direct insulator-quantum Hall transition in multi-layer epitaxial graphene

August 1, 2013
Author(s)
Randolph E. Elmquist, Fan-Hung Liu, Chang-Shun Hsu, Chiashain Chuang, Tak-Pong Woo, Lung-I Huang Huang, Chi-Te Laing, Yasuhiro Fukuyama, Yanfei Yang
We have performed magnetotransport measurements on multi-layer epitaxial graphene. By increasing the driving current I through our graphene devices while keeping the bath temperature fixed, we are able to study Dirac fermion heating and current scaling in

Two-dimensional transport and screening in topological insulator surface states

June 6, 2012
Author(s)
Shaffique Adam, Euyheon Hwang, Sankar Das Sarma
We study the surface states of Bi2Se3 close to the topologically protected crossing point. Close to charge neutrality, local fluctuations in carrier density result in electron and hole puddles that dominate the electronic properties of these materials. By

Characteristics of Graphene for Quantized Hall Effect Measurements

June 1, 2012
Author(s)
Randolph E. Elmquist, Mariano A. Real, Irene G. Calizo, Brian G. Bush, Tian T. Shen, Nikolai N. Klimov, David B. Newell, Angela R. Hight Walker, Randall M. Feenstra
This paper describes concepts and measurement techniques necessary for characterization of graphene in the development of graphene-based quantized Hall effect (QHE) devices and resistance standards. We briefly contrast the properties of graphene produced

Electronic properties of multilayer graphene

March 31, 2012
Author(s)
Hongki Min
In this chapter, we study the electronic structure of arbitrarily stacked multilayer graphene in the absence or presence of magnetic field. Energy band structure and Landau level spectrum are obtained using a pi-orbital continuum model with nearest

Formation and structure of 360 and 540 degree domain walls in thin magnetic stripes

February 10, 2012
Author(s)
Youngman Jang, Samuel R. Bowden, Mark Mascaro, John Unguris, Caroline Ross
360˚, 540˚ and other complex transverse domain walls have been created in narrow Co wires connected to injection pads by cycling a magnetic field perpendicular to the wire length. The composite walls, formed by impingement of 180˚ transverse walls of

Graphene: Plane and Simple Electrical Metrology?

December 7, 2011
Author(s)
Randolph E. Elmquist, Felipe Hernandez-Marquez, Mariano Real, Tian T. Shen, David B. Newell, Colin J. Jacob, George R. Jones
The development of large-area graphene has direct application to electrical standards including the quantized Hall resistance because of unique characteristics not found in conventional devices. These include symmetrical conduction by electrons and holes

Mechanism for puddle formation in graphene

December 5, 2011
Author(s)
Shaffique Adam, Suyong S. Jung, Nikolai N. Klimov, Nikolai B. Zhitenev, Joseph A. Stroscio, Mark D. Stiles
Close to charge neutrality, graphene's energy landscape is highly inhomogeneous, forming a sea of electron-like and hole-like puddles that determine the properties of graphene at low carrier density. However, the details of puddle formation have remained

Graphene Production for Electrical Metrology

June 1, 2011
Author(s)
Randolph E. Elmquist, David B. Newell, George R. Jones, Felipe L. Marquez-Hernandez, Mariano A. Real, Tian T. Shen
Many material and electronic contributions must be favorable to produce devices with strong quantum Hall effect (QHE) plateaus that are suitable for precise resistance metrology. Even so, metrologically interesting QHE plateaus have been observed in

Electronic transport in two dimensional graphene

May 16, 2011
Author(s)
Shaffique Adam, Sankar Das Sarma, Euyheon Hwang, Enrico Rossi
We provide a broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature dependent carrier transport in doped or gated graphene structures. A salient feature of our review is a critical

Semiclassical Boltzmann transport theory for graphene multilayers

May 11, 2011
Author(s)
Hongki Min, Parakh Jain, Shaffique Adam, Mark D. Stiles
We calculate the conductivity of arbitrarily stacked multilayer graphene sheets within a relaxation time approximation by considering both short-range and long-range impurities. We investigate theoretically the feasibility of identifying the stacking order

Landau Levels and Band Bending in Few-Layer Epitaxial Graphene

April 18, 2011
Author(s)
Hongki Min, Shaffique Adam, Young J. Song, Joseph A. Stroscio, Mark D. Stiles, Allan H. MacDonald
The carrier density distributions in few-layer-graphene systems grown on the carbon face of silicon carbide can be radically altered by the presence of a Scanning Tunneling Microscope (STM) tip used to probe top-layer electronic properties, and by a
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