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Donor-based quantum devices in silicon are attractive platforms for universal quantum computing and analog quantum simulations. The nearly-atomic precision in dopant placement promises great control over the quantum properties of these devices. We present
Reliable models of electron-solid interactions are essential to accurately infer geometrical dimensions from the intensity line scan of SEM images. Refining existing models is complicated by the lack of benchmark experiments; the available measurement
In semiconductor device manufacturing, 3D structure measurements of newly complex devices would be valuable alongside conventional scanning electron microscopy (SEM) and critical dimension SEM (CD-SEM) measurements. Since these applications in SEM directly
S Norimoto, P See, N Schoinas, I Rungger, Tommy Boykin, Michael Stewart, J. P. Griffiths, C. Chen, D. A. Ritchie, M. Kataoka
Increasing electric current from a single-electron source is a main challenge in an effort to establish the standard of the ampere defined by the fixed value of the elementary charge e and operation frequency f . While the current scales with f , due to an
William Borders, Advait Madhavan, Matthew Daniels, Vasileia Georgiou, Martin Lueker-Boden, Tiffany Santos, Patrick Braganca, Mark Stiles, Jabez J. McClelland, Brian Hoskins
The increasing scale of neural networks needed to support more complex applications has led to an increasing requirement for area- and energy-efficient hardware. One route to meeting the budget for these applications is to circumvent the von Neumann
Albert Davydov, Yaw S. Obeng, Ndubuisi George Orji, Umberto Celano, Daniel Schmidt, Carlos Beitia
The international roadmap of devices and systems (IRDS) projects that 2D materials will be inserted into high-volume manufacturing as channel materials, mostly for low-power applications within the next ten years. While their broader introduction in the
Olga Ridzel, Wataru Yamane, Ishiaka Mansaray, John S. Villarrubia
We are beginning projects to validate the physics models used for interpretation of electron microscopy images. In one, we will measure electron yields and energy spectra from cleaned well-characterized samples subjected to electron bombardment inside of a
Robert F. Berg, Charles S. Tarrio, Thomas B. Lucatorto
We present measurements and a model of aluminum oxidation induced by ultraviolet (UV) radiation. Spots of oxide were grown by focusing synchrotron radiation onto a polycrystalline aluminum membrane in the presence of water vapor at pressures from 3×10-8
Spencer Reisbick, Myung-Geun Han, Chuhang Liu, yubin zhao, Eric Montgomery, Vikrant Gokhale, Jason J. Gorman, Chunguang Jing, June W. Lau, Yimei Zhu
The development of ultrafast electron microscopy (UEM), specifically stroboscopic imaging, has brought the study of structural dynamics to a new level by overcoming the spatial limitations of ultrafast spectroscopy and the temporal restrictions of
Jacob Taylor, Daniel Carney, Hartmut Haffner, David Moore
Electrons and ions trapped with electromagnetic fields have long served as important high- precision metrological instruments, and more recently have also been proposed as a platform for quantum information processing. Here we point out that these systems
Emily A. Townsend, Tom?a?s Neuman, Alex Debrecht, Javier Aizpurua, Garnett W. Bryant
The exact study of small systems can guide us toward relevant measures for extracting information about many-body physics as we move to larger and more complex systems capable of quantum information processing or quantum analog simulation. We use exact
Trends in the zeroth frequency moment of the imaginary part of the dielectric function are studied for a wide range of metals, semiconductors and insulators. These results are combined with estimates for the inverse-first moment (related by Kramers-Kronig
Eric L. Shirley, Joseph Woicik, Cherno Jaye, Daniel A. Fischer, Abdul K. Rumaiz, Joshua J. Kas, John J. Rehr, Conan Weiland
Complete ab initio real-time cumulant and Bethe-Salpeter-equation calculations accurately capture the detailed satellite structure observed in both the photoemission and x-ray absorption spectra of the transition-metal compounds SrTiO3 and TiO2. Real-space
Plasma simulations require accurate yield data to predict the electron flux that is emitted when plasma-exposed surfaces are bombarded by energetic particles. One can measure yields directly using particle beams, but it is impractical to create a separate
In wide-range magnetometry using optically detected magnetic resonance of NV- centers, we demonstrate more than order-of-magnitude speed up with sequential Bayesian experiment design as compared with conventional frequency-swept measurements. The NV-
Kamal Choudhary, Kevin Garrity, Andrew C. Reid, Brian DeCost, Adam Biacchi, Angela R. Hight Walker, Zachary Trautt, Jason Hattrick-Simpers, Aaron Kusne, Andrea Centrone, Albert Davydov, Francesca Tavazza, Jie Jiang, Ruth Pachter, Gowoon Cheon, Evan Reed, Ankit Agrawal, Xiaofeng Qian, Vinit Sharma, Houlong Zhuang, Sergei Kalinin, Ghanshyam Pilania, Pinar Acar, Subhasish Mandal, David Vanderbilt, Karin Rabe
The Joint Automated Repository for Various Integrated Simulations (JARVIS) is an integrated infrastructure to accelerate materials discovery and design using density functional theory (DFT), classical force-fields (FF), and machine learning (ML) techniques
Steven R. Spurgeon, Colin Ophus, Lewys Jones, Amanda K. Petford-Long, Sergei Kalinin, Matthew J. Olszta, Rafal Dunin-Borkowski, Norman Salmon, Khalid Hattar, Wei-Chang Yang, Renu Sharma, Yingge Du, Ann Chiaramonti Debay, Haimei Zheng, Edgar C. Buck, Libor Kovarik, R. Lee Penn, Dongsheng Li, Xin Zhang, Mitsuhiro Murayama, Mitra D. Taheri
The rapidly evolving field of electron microscopy touches nearly every aspect of modern life, underpinning impactful materials discoveries in applications such as quantum information science, energy, and medicine. As the field enters a new decade, a
Tanya Gupta, Evgheni Strelcov, Glenn Holland, Joshua D. Schumacher, Yang Yang, Mandy Esch, Vladimir Aksyuk, Patrick Zeller, Matteo Amati, Luca Gregoratti, Andrei Kolmakov
Additive fabrication of biocompatible 3D structures out of liquid hydrogel solutions has become pivotal technology for tissue engineering, soft robotics, biosensing, drug delivery etc. Electron and X-ray lithography are well suited to pattern nanoscopic
The effective attenuation length (EAL) is a useful parameter in quantitative applications of X- ray photoelectron spectroscopy (XPS). This parameter is used in place of the inelastic mean free path (IMFP) in expressions for different XPS applications to