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Landau Levels and Band Bending in Few-Layer Epitaxial Graphene

Published

Author(s)

Hongki Min, Shaffique Adam, Young J. Song, Joseph A. Stroscio, Mark D. Stiles, Allan H. MacDonald

Abstract

The carrier density distributions in few-layer-graphene systems grown on the carbon face of silicon carbide can be radically altered by the presence of a Scanning Tunneling Microscope (STM) tip used to probe top-layer electronic properties, and by a perpendicular magnetic field which induces well-defined Landau levels. Hartree approximation calculations in the perpendicular field case show that charge tends to rearrange between the layers so that the filling factors of most layers are pinned at integer values. We use our analysis to provide insight into the role of buried layers in recent few-layer-graphene STM studies and discuss the limitations of our model.
Citation
Physical Review B
Volume
83
Issue
15

Citation

Min, H. , Adam, S. , Song, Y. , Stroscio, J. , Stiles, M. and MacDonald, A. (2011), Landau Levels and Band Bending in Few-Layer Epitaxial Graphene, Physical Review B, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=907652 (Accessed May 29, 2024)

Issues

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Created April 17, 2011, Updated October 12, 2021