Characteristics of Graphene for Quantized Hall Effect Measurements

Published

June 1, 2012

Author(s)

Randolph E. Elmquist, Mariano A. Real, Irene G. Calizo, Brian G. Bush, Tian T. Shen, Nikolai N. Klimov, David B. Newell, Angela R. Hight Walker, Randall M. Feenstra

Abstract

This paper describes concepts and measurement techniques necessary for characterization of graphene in the development of graphene-based quantized Hall effect (QHE) devices and resistance standards. We briefly contrast the properties of graphene produced by three common processing methods and discuss the conditions necessary for well-developed resistance plateaus to be observed. Methods used to determine the graphene layer thickness are presented. These metrologically relevant characteristics of graphene are correlated with electrical transport measurements in strong magnetic fields.

Proceedings Title

CPEM 2012 Conference Digest

Conference Dates

July 2-6, 2012

Conference Location

Washington, DC

Conference Title

Conference on Precision Electromagnetic Measurements 2012

Pub Type

Conferences

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Keywords

Electrical resistance measurements, graphene, material properties, measurement standards, quantum Hall effect

Citation

Elmquist, R. , Real, M. , Calizo, I. , Bush, B. , Shen, T. , Klimov, N. , Newell, D. , Hight, A. and Feenstra, R. (2012), Characteristics of Graphene for Quantized Hall Effect Measurements, CPEM 2012 Conference Digest, Washington, DC, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=910365 (Accessed March 21, 2025)