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Two-dimensional transport and screening in topological insulator surface states

Published

Author(s)

Shaffique Adam, Euyheon Hwang, Sankar Das Sarma

Abstract

We study the surface states of Bi2Se3 close to the topologically protected crossing point. Close to charge neutrality, local fluctuations in carrier density result in electron and hole puddles that dominate the electronic properties of these materials. By calculating the polarizability of the surface state using the random phase approximation, and determining the characteristics of puddles using the self-consistent approximation, we find band asymmetry plays a crucial role determining experimentally measured quantities including the conductivity and the puddle autocorrelation length.
Citation
Physical Review B
Volume
85
Issue
23

Keywords

Topological insulators, conductivity

Citation

Adam, S. , Hwang, E. and Das, S. (2012), Two-dimensional transport and screening in topological insulator surface states, Physical Review B, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=910440 (Accessed June 12, 2024)

Issues

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Created June 6, 2012, Updated February 19, 2017