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Nanotechnology

Nanometrology

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Displaying 601 - 625 of 866

Carbon Nanotube Nucleation Driven by Catalyst Morphology Dynamics

November 14, 2011
Author(s)
Elena Pigos, Evgeni S. Penev, Morgana A. Ribas, Renu Sharma, Boris I. Yakobson, Avetik R. Harutyunyan
In situ observation of carbon nanotube nucleation process accompanied by catalyst particle dynamic morphology reconstruction is considered within a thermodynamic approach, and reveals the driving force for the liftoff—a crucial event in the nanotube growth

Fundamental Limits of Optical Patterned Defect Metrology

November 14, 2011
Author(s)
Richard Silver, Bryan Barnes, Martin Sohn, Hui Zhou, Jing Qin
The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark-field inspection methods now at their limits, it has become

Viscoelastic Property Mapping with Contact Resonance Force Microscopy

November 4, 2011
Author(s)
Jason P. Killgore, Donna C. Hurley, Dalia Yablon, Joseph Turner, Philip Yuya, Roger Proksch, Anil Gannepalli, Andy Tsou
We demonstrate accurate nanoscale mapping of loss and storage modulus on a polystyrene-polypropylene blend with contact resonance force microscopy (CR-FM). The viscoelastic properties are extracted from spatially resolved maps of the contact resonance

Method for Determining the Absolute Number Concentration of Nanoparticles from Electrospray

October 27, 2011
Author(s)
Mingdong M. Li, Suvajyoti S. Guha, Rebecca A. Zangmeister, Michael J. Tarlov, Michael R. Zachariah
We have developed a simple, fast, and accurate method to measure the absolute number concentration of nanoparticles in solution. The method combines electrospray-differential mobility analysis (ES-DMA) with a statistical analysis of droplet induced

Nanoscale Focused Ion Beam from Laser-cooled Lithium Atoms

October 26, 2011
Author(s)
Brenton J. Knuffman, Adam V. Steele, Jon Orloff, Jabez J. McClelland
To advance the capabilities of focused ion beam (FIB) technology, we have created a low-energy FIB from photoionized lithium atoms collected in a magneto-optical trap (MOT). This magneto-optical trap ion source relies on both the low temperature of the

High Frequency Characterization of Contact Resistance and Conductivity of Platinum Nanowires*

October 1, 2011
Author(s)
Kichul Kim, Paul Rice, Thomas M. Wallis, Dazhen Gu, SangHyun S. Lim, Atif A. Imtiaz, Pavel Kabos, Dejan Filipovic
Abstract— Individual platinum (Pt) nanowires (NWs) with 100 nm and 250 nm diameters, embedded in coplanar waveguide (CPW) structures are investigated. Three approaches for characterization of their contact resistance and conductivity at high frequencies

Real-Time Image Composition with Correction of Drift Distortion

September 20, 2011
Author(s)
Petr Cizmar, Andras Vladar, Michael T. Postek
In this article, a new scanning electron microscopy (SEM) image composition technique is de- scribed, which can significantly reduce drift-distortion related image corruptions. Drift-distortion commonly causes blur and distortions in the SEM images. Such

Effect of AlN Buffer Layer Properties on the Morphology and Polarity of GaN Nanowires Grown by Molecular Beam Epitaxy

September 8, 2011
Author(s)
Matthew D. Brubaker, Kristine A. Bertness, Norman A. Sanford, Albert Davydov, Igor Levin, Devin M. Rourke, Victor M. Bright
Low temperature AlN buffer layers grown by plasma-assisted Molecular Beam Epitaxy (MBE) on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusions

Measuring agglomerate size distribution and dependence of localized surface plasmon resonance absorbance on gold nanoparticle agglomerate size using analytical ultracentrifugation

September 3, 2011
Author(s)
Justin M. Zook, Vinayak Rastogi, Robert I. MacCuspie, Athena M. Keene, Jeffrey A. Fagan
Nanoparticles frequently agglomerate when dispersed into relevant biological and environmental media, with the resulting change to the effective size distribution dramatically affecting the potential nanotoxicity and the absorbance for biosensor

Accurate Nanometer-Scale Imaging and Measurements with SEM

August 18, 2011
Author(s)
Bradley N. Damazo, Bin Ming, Premsagar P. Kavuri, Andras Vladar, Michael T. Postek
Scanning electron microscopes (SEMs) are incredibly versatile instruments for millimeter to nanometer scale imaging and measurements of size and shape. New methods to improve repeatability and accuracy have been implemented on the so-called Reference SEMs

Controlling Formation of Atomic Step Morphology on Micro-patterned Si (100)

August 9, 2011
Author(s)
Kai Li, Pradeep Namboodiri, Sumanth B. Chikkamaranahalli, Gheorghe Stan, Ravikiran Attota, Joseph Fu, Richard M. Silver
Micro scale features are fabricated on Si (100) surfaces using lithographic techniques and then thermally processed in an ultra high vacuum (UHV) environment. Samples are flash heated at 1200 °C and further annealed at 1050 °C for 18 hours. The surface

Advanced Image Composition with Intra-Frame Drift Correction

July 19, 2011
Author(s)
Petr Cizmar, Andras Vladar, Michael T. Postek
Drift Corrected Image Composition (DCIC) is a real-time technique that allows for acquiring significantly more accurate images compare to traditional slow or fast imaging methods.[Ref.] It is especially useful in nanometer-scale imaging and metrology

Dimensional Analysis of Through Silicon Vias Using the TSOM Method

July 12, 2011
Author(s)
Ravikiran Attota, Andrew Rudack
There is a great need for accurate, truly-3D metrology solutions that can be used for analysis of high aspect ratio features such as through-silicon-vias (TSVs). Through-focus scanning optical microscopy (TSOM) is an optical metrology method that provides

Electrical Characterization of Photoconductive GaN Nanowire Devices from 50 MHz to 33 GHz

July 1, 2011
Author(s)
Thomas M. Wallis, Dazhen Gu, Atif A. Imtiaz, Pavel Kabos, Paul T. Blanchard, Norman A. Sanford, Kristine A. Bertness, Christpher Smith
The electrical response of two-port., photoconductive GaN nanowire devices was measured from 50 MHz to 33 GHz. The admittance of individual contacted nanowires showed an increase on the order of 10% throughout the measured frequency range after exposure to

Evaluating the characteristics of multiwall carbon nanotubes

July 1, 2011
Author(s)
John H. Lehman, M. Terrones, Elisabeth Mansfield, Katie Hurst, Vincent Muenier
During the past 20 years, multiwall carbon nanotubes (MWCNTs) have become an important industrial material. Hundreds of tons are produced each year. This review is a survey of the scientific literature, motivated by industrial requirements and guidelines

Graphene: Materials to devices

July 1, 2011
Author(s)
Jungseok Chae, Jeonghoon Ha, H. Baek, Young Kuk, Suyong S. Jung, Young J. Song, Nikolai B. Zhitenev, Joseph A. Stroscio, S.J. Woo, Y.-W. Son
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