Electrical Characterization of Photoconductive GaN Nanowire Devices from 50 MHz to 33 GHz

Published

July 1, 2011

Author(s)

Thomas M. Wallis, Dazhen Gu, Atif A. Imtiaz, Pavel Kabos, Paul T. Blanchard, Norman A. Sanford, Kristine A. Bertness, Christpher Smith

Abstract

The electrical response of two-port., photoconductive GaN nanowire devices was measured from 50 MHz to 33 GHz. The admittance of individual contacted nanowires showed an increase on the order of 10% throughout the measured frequency range after exposure to steady ultraviolet illumination. High-frequency measurements provide sensitivity to changes in the electrical reactance of the devices that is not available via DC measurements. A two-port microwave network model was developed and was used to extract microwave circuit parameters in the photoconductive and dark states. The change in self-inductance of the device after exposure to ultraviolet radiation corresponded to an increase in the effective radius of the conduction channel by a factor of 1.54.

Citation

Nanotechnology

Volume

10

Issue

4

Pub Type

Journals

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Keywords

coplanar waveguide (CPW), CaN nanowires, microwaves, photoconductivity, tow-port measurements.

Citation

Wallis, T. , Gu, D. , Imtiaz, A. , Kabos, P. , Blanchard, P. , Sanford, N. , Bertness, K. and Smith, C. (2011), Electrical Characterization of Photoconductive GaN Nanowire Devices from 50 MHz to 33 GHz, Nanotechnology, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=903093 (Accessed October 10, 2025)