Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Electrical Characterization of Photoconductive GaN Nanowire Devices from 50 MHz to 33 GHz



Thomas M. Wallis, Dazhen Gu, Atif A. Imtiaz, Pavel Kabos, Paul T. Blanchard, Norman A. Sanford, Kristine A. Bertness, Christpher Smith


The electrical response of two-port., photoconductive GaN nanowire devices was measured from 50 MHz to 33 GHz. The admittance of individual contacted nanowires showed an increase on the order of 10% throughout the measured frequency range after exposure to steady ultraviolet illumination. High-frequency measurements provide sensitivity to changes in the electrical reactance of the devices that is not available via DC measurements. A two-port microwave network model was developed and was used to extract microwave circuit parameters in the photoconductive and dark states. The change in self-inductance of the device after exposure to ultraviolet radiation corresponded to an increase in the effective radius of the conduction channel by a factor of 1.54.


coplanar waveguide (CPW), CaN nanowires, microwaves, photoconductivity, tow-port measurements.


Wallis, T. , Gu, D. , Imtiaz, A. , Kabos, P. , Blanchard, P. , Sanford, N. , Bertness, K. and Smith, C. (2011), Electrical Characterization of Photoconductive GaN Nanowire Devices from 50 MHz to 33 GHz, Nanotechnology, [online], (Accessed April 14, 2024)
Created July 1, 2011, Updated February 19, 2017