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Metrology

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Displaying 2151 - 2175 of 2745

Critical Dimension Metrology and the Scanning Electron Microscope

December 1, 2001
Author(s)
Michael T. Postek, Andras Vladar
Metrology is a principal enabler for the development and manufacture of current and future generations of semiconductor devices. With the potential of 130-nm, and 100-nm, and even smaller linewidths and high-aspect-ratio structures, the scanning electron

Nanomachining of Si with Si3N4 Masks Patterned by Scanning

November 1, 2001
Author(s)
F S. Chien, John A. Dagata, W F. Hsieh, S Gwo
We demonstrate that local oxidation of silicon nitride films deposited on conductive substrates with a conductive-probe atomic force microscope (AFM) is a very promising approach for nanofabrication. Scanning Auger microscopy and spectroscopy are employed

Trial Shape-Sensitive Linewidth Measurement System

November 1, 2001
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
This is a report for a project to develop a scanning electron microscope (SEM) based shape-sensitive linewidth measurement system by improving the method by improving the method by which SEM data are analyzed. We report significant developments in

Accuracy and Versatility of the NIST M48 Coordinate Measuring Machine

October 1, 2001
Author(s)
John R. Stoup, Theodore D. Doiron
The NIST Is continuing to develop the ability to perform accurate, traceable measurements on a wide range of artifacts using a very precise, error-mapped coordinate measuring machine (CMM). The NIST M48 CMM has promised accuracy and versatility for many

Some Developments at NIST on Traceability in Dimensional Measurements

October 1, 2001
Author(s)
Dennis A. Swyt, Steven D. Phillips, J Palmateer
This paper reports to the international community on recent developments in technical ;policies, programs, and capabilities at the U.S. National Institute of Standards and Technology (NIST) related to traceability in dimensional measurements. These

NIST-ASME Workshop on Uncertainty in Dimensional Measurements

September 1, 2001
Author(s)
Dennis A. Swyt
A 2 1/2-day workshop on problems in use of uncertainty in dimensional measurements sponsored by NIST and ASME was held June 5-7, 2001, at NIST in Gaithersburg, MD. The workshop was attended by fifty-six representatives of organizations including

NISURF-II, An Upgraded Surface Measuring Facility

September 1, 2001
Author(s)
S Z. Zahwi, M F. Koura, Thomas Brian Renegar, A M. Mekawi
During 1982-1985, a cooperative project was made between the National Bureau of Standards (NBS) at that time (now National Institute of Standards and Technology (NIST - USA)) and the National Institute for Standards (NIS - Egypt) to establish a

Active Monitoring and Control of Electron-Beam-Induced Contaminaition

August 1, 2001
Author(s)
Andras Vladar, Michael T. Postek, R Vane
The vacuum system of all scanning electron microscopes (SEMs), even in the so-called clean instruments, have certain hydrocarbon residues that the vacuum pumps do not effectively remove. The cleanliness of the vacuum and the amount and nature of these

Active Monitoring and Control of Electron-Beam-Induced Contamination

August 1, 2001
Author(s)
Andras Vladar, Michael T. Postek, R Vane
The vacuum systems of all scanning electron microscopes (SEMs), even in the so-called clean instruments, have certain hydrocarbon residues that the vacuum pumps do not effectively remove. The cleanliness of the vacuum and the amount and nature of these

Comparison of Edge Detection Methods Using a Prototype Overlay Calibration Artifact

August 1, 2001
Author(s)
Richard M. Silver, Jay S. Jun, Edward A. Kornegay, R Morton
Accurate overlay measurements rely on robust, repeatable, and accurate feature position determination. In our effort to develop traceable we have examined a number of and the parameters which affect those measurements. The samples used in this study are a

Edge Determination for Polycrystalline Silicon Lines on Gate Oxide

August 1, 2001
Author(s)
John S. Villarrubia, Andras Vladar, J R. Lowney, Michael T. Postek
In a scanning electron microscope (SEM) top-down secondary electron image, areas within a few tens of nanometers of the line edges arc characteristically brighter than the rest of the image. In general, the shape of the secondary electron signal within

Electric Force Microscopy with a Single Carbon Nanotube Tip

August 1, 2001
Author(s)
John A. Dagata, F S. Chien, S Gwo, K Morimoto, T Inoue, J Itoh, H Yokoyama
Carbon nanotube tips offer a significant improvement over standard scanned probe microscope (SPM) tips for electrical characterization of nanodevice structures. Carbon nanotube tips are compatible with requirements for integrated SPM probe station

Problem with Submicrometer-linewidth Standards and A Possible Solution

August 1, 2001
Author(s)
James E. Potzick
Traceable linewidth measurements of tiny features on photomasks and wafers present interesting challenges. Usually technical solutions exist for the problems encountered, but traceability can be costly in time and labor. A measurement is useful only if its

Problem With Submicrometer-Linewidth Standards and a Proposed Solution

August 1, 2001
Author(s)
James E. Potzick
Traceable linewidth measurements of tiny features on photomasks and wafers present interesting challenges. Usually technical solutions exist for the problems encountered, but traceability can be costly in time and labor. A measurement is useful only if its
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