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Manufacturing

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Displaying 1901 - 1925 of 2179

Extinction Coefficients for Dielectric and Conducting Doublets of Spheres

January 1, 1998
Author(s)
Egon Marx
The extinction cross-sections of doublets of polystyrene and carbon spheres are determined using the optical theorem. The forward scattering amplitude is computed using the single integral equation method. The extinction cross-sections of the doublets are

Image Sharpness Measurement in Scanning Electron Microscopy - Part I

January 1, 1998
Author(s)
Michael T. Postek, Andras Vladar
This study introduces the idea of the sharpness concept in relationship to the determination of scanning electron microscope (SEM) perfomance. Scanning electron microscopes are routinely used in many manufacturing environments. Fully automated or

Improving Step Height and Pitch Measurements Using the Calibrated Atomic Force Microscope

January 1, 1998
Author(s)
R Koning, Ronald G. Dixson, Joseph Fu, V W. Tsai, Theodore V. Vorburger
The most important industrial application of Atomic Force Microscopy (AFM) is probably the accurate measurement of geometrical dimensions of small surface structures. In order to maintain the instrument''s performance and to achieve the high accuracy often

Learning to Set Up Numerical Optimizations of Engineering Designs

January 1, 1998
Author(s)
Mark Schwabacher, T Ellman, H Hirsh
Gradient-based numerical optimization of complex engineering designs offers the promise of rapidly producing better designs. However, such methods generally assume that the objective function and constraint functions are continuous, smooth, and defined

Measurement Traceability of NIST Standard Rockwell Diamond Indenters

January 1, 1998
Author(s)
Jun-Feng Song, Samuel R. Low III, Walter S. Liggett Jr, David J. Pitchure, Theodore V. Vorburger
A metrology-based Rockwell hardness scale is established by a standard machine and a standard diamond indenter. Both must be established through force and dimensional metrology with acceptably small measurement uncertainties. In 1994, NIST developed a

NIST Microform Calibration - How It Benefits U.S. Industry

January 1, 1998
Author(s)
Jun-Feng Song, Theodore V. Vorburger
In microform metrology, complex 3-D surface features in the micrometer range must be quantified for their space and size including dimensions, curves, angles, profile deviations, and alignment errors, as well as surface roughness with measure uncertainties

Pixel Based Absolute Topography Test for Three Flats

January 1, 1998
Author(s)
R E. Parks, Lianzhen Shao, Christopher J. Evans
We demonstrate a new method of performing the absolute three flat test using reflection symmetries of the surfaces and an algorithm for generating the rotation of arrays of pixel data. Most of the operations involve left/right and top/bottom flips of data

Rapidly Renewable Lap: Theory and Practice

January 1, 1998
Author(s)
Christopher J. Evans, R E. Parks, David J. Roderick, Michael L. McGlauflin
The rapidly renewable lap (RRL) uses a textured substrate over which thin films are slumped. The substrate provides the geometry of the lap and a localized texture, depending on the film thickness, properties, and means by which it is deformed over and

Reactive Scheduling System Implementations Using a Simulated Shop Floor

January 1, 1998
Author(s)
Frank H. Riddick
Developing approaches to integrating manufacturing applications is important for increasing manufacturing productivity. A reactive scheduling system architecture has been developed that defines how to integrate scheduling technology with manufacturing shop

Scanning Electron Microscope Length Standards (Chapter VII in: Benchmarking the Length Measurement Capabilities of the National Institute of Standards and Technology, R.M. Silver, J.L. Land, Editors, NISTIR 6036)

January 1, 1998
Author(s)
Michael T. Postek, Joseph Fu
A cross-section of length measurement capabilities fiom the Precision Engineering Division within the National Institute of Standards and Technology is benchmarked against those of other leading National Measurement Institutes. We present a variety of

Technical Directions of the NIST Precision Engineering Division: 1997-2001

January 1, 1998
Author(s)
Dennis A. Swyt, Howard H. Harary, Michael T. Postek, Richard M. Silver, Theodore V. Vorburger
This report, based on U.S. industry roadmaps and related National Institute of Standards and Technology studies, is a product of the process of strategic planning for the NIST Precision Engineering Division (PED) and presents the major technological trends

Testing Displacement-Measuring Interferometer Systems

January 1, 1998
Author(s)
Jack A. Stone Jr., Martin Schroeck, Michael T. Stocker
We have made a study of one method for testing displacement-measuring interferometer systems, a modified back-to-back comparison, that automatically compensates for changes in the optical path length between the two interferometers. Although this method

The DOE2000 Materials MicroCharacterization Collaboratory

January 1, 1998
Author(s)
E Voelkl, K Alexander, J Mabon, M O'Keefe, Michael T. Postek, M Wright, N J. Zaluzec
The Materials Microcharacterization Collaboratory (MMC) was created last year as a pilot project within the U.S. Department of Energy''s DOE2000 program. The DOE2000 program has, as its main goals, to develop improved capabilities for solving DOE''s

The Role of Space Charge in Scanned Probe Oxidation

January 1, 1998
Author(s)
John A. Dagata
The growth rate and electrical character of nanostructures produced by scanned probe oxidation are investigated by integrating an in-situ electrical force characterization technique, scanning Maxwell-stress microscopy, into the fabrication process

The Study of Silicon Stepped Surfaces as Atomic Force Microscope Calibration Standards With a Calibrated AFM at NIST

January 1, 1998
Author(s)
V W. Tsai, Theodore V. Vorburger, Ronald G. Dixson, Joseph Fu, R Koning, Richard M. Silver, E. C. Williams
Due to the limitations of modern manufacturing technology, there is no commercial height artifact at the sub-nanometer scale currently available. The single-atom steps on a cleaned silicon (111) surface with a height of 0.314 nm, derived from the lattice

Understanding Scanned Probe Oxidation of Silicon

January 1, 1998
Author(s)
John A. Dagata, T Inoue, J Itoh, H Yokoyama
A model for scanned probe microscope (SPM) silicon oxidation is presented. The model was derived from a consideration of the space-charge dependence of this solid-state reaction as a function of substrate doping type/level and has been verified

Vibration of a Room-Sized Airspring-Supported Slab

January 1, 1998
Author(s)
H Amick, B Sennewald, N C. Pardue, E C. Teague, Brian R. Scace
This paper reports the results of the finite element analysis and in situ testing of a large-scale (4 m x 10 m) pneumatically isolated concrete slab. The slab was constructed as a design prototype for next-generation metrology laboratories at the National

Voltage Modulation Scanned Probe Oxidation (Abstract)

January 1, 1998
Author(s)
John A. Dagata, T Inoue, J Itoh, K Matsumoto, H Yokoyama
This talk describes methods for enhancing the growth rate and electrical characteristics of nanostructures produced on silicon and titanium substrates by scanned probe microscope (SPM) oxidation. Direct oxidation of a substrate by the intense electric

Application of Transmission Electron Detection to SCALPEL Mask Metrology

November 1, 1997
Author(s)
R Farrow, Michael T. Postek, William J. Keery, Samuel N. Jones, J R. Lowney, M Blakey, L Fetter, J Griffith, J E. Liddle, L C. Hopkins, H A. Huggins, M Peabody, A Novembre
Linewidth measurements were performed on a 4X scattering with angular limitation in projection electron lithography (SCALPEL) e-beam lithography mask using the transmitted electron signal in a modified scanning electron microscope. Features as small as 0
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