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The Study of Silicon Stepped Surfaces as Atomic Force Microscope Calibration Standards With a Calibrated AFM at NIST

Published

Author(s)

V W. Tsai, Theodore V. Vorburger, Ronald G. Dixson, Joseph Fu, R Koning, Richard M. Silver, E. C. Williams

Abstract

Due to the limitations of modern manufacturing technology, there is no commercial height artifact at the sub-nanometer scale currently available. The single-atom steps on a cleaned silicon (111) surface with a height of 0.314 nm, derived from the lattice constant of silicon, have considerable potential as a AFM calibration artifact at the sub-nanometer range. A metrology AFM developed at NIST, called the calibrated AFM (C-AFM), is used to measure this type of surface. In this paper, the results of six sets of measurements made over a period of five months are presented. The calculation of the step algorithm and the uncertainty of the measurement are introduced and discussed briefly.
Proceedings Title
1998 International Conference on Characterization and Metrology for ULSI Technology
Conference Dates
April 28, 1998
Conference Location
Gaithersburg, MD
Conference Title
International Conference on Characterization and Metrology for ULSI Technology

Keywords

calibration, SPM Metrology, step height

Citation

Tsai, V. , Vorburger, T. , Dixson, R. , Fu, J. , Koning, R. , Silver, R. and , E. (1998), The Study of Silicon Stepped Surfaces as Atomic Force Microscope Calibration Standards With a Calibrated AFM at NIST, 1998 International Conference on Characterization and Metrology for ULSI Technology, Gaithersburg, MD (Accessed May 18, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created January 1, 1998, Updated February 19, 2017