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F Perez-murano, K Birkelund, K Morimoto, John A. Dagata
Scanned probe microscope (SPM) oxidation with voltage modulation leads to a significant enhancement of the oxide growth rate, improvement of the aspect ratio of oxide features, and control of the structural and electrical properties of the SPM oxide
A follow-on to Measures for Progress by Rexmond C. Cochrane, this work covers the history of the National Bureau of Standards (NBS) from 1950-1969. While the book focuses on technical work, the management and administration of the Bureau are also discussed
Walter S. Liggett Jr, Samuel Low, David J. Pitchure, Jun-Feng Song
In the use of hardness test blocks, the uncertainty due to block non-uniformity can be reduced if one is willing to make measurements at specified locations on the blocks. Statistical methods for achieving this reduction are explained in this paper. The
Ronald G. Dixson, R Koning, V W. Tsai, Joseph Fu, Theodore V. Vorburger
Atomic force microscopes (AFMs) are increasingly used in the semiconductor industry as tools for submicrometer dimensional metrology. The scales of an AFM must be calibrated in order to perform accurate measurements. We have designed and developed the
S Fox, Mario Dagenais, Edward A. Kornegay, Richard M. Silver
We present results of investigations into optical focus and edge detection algorithms relevant to overlay metrology. We compare gradient energy, standard deviation, contrast and summed intensity of acquired images as focus metrics for bright-field
John S. Villarrubia, Ronald G. Dixson, Samuel N. Jones, J R. Lowney, Michael T. Postek, Richard A. Allen, Michael W. Cresswell
Uncertainty in the locations of line edges dominates the uncertainty budget for high quality sub-micrometer linewidth measurements. For microscopic techniques like scanning electron microscopy (SEM) and atomic force microscopy (AFM), the image of the sharp
A metrology-based Rockwell hardness scale is established by a standard machine and a standard diamond indenter. Both must be established through force and dimensional metrology with acceptably small measurement uncertainties. In 1994, NIST developed a
The measurement of feature sizes on integrated circuit photomasks and wafers is an economically important and technically challenging application of nanometrology. The displacement measuring laser heterodyne interferometer is a popular tool in such
The SEMATECH advanced metrology advisory group (AMAG) recently issued a critical dimension (CD) scanning electron microscope (SEM) specification. One component of this specification was the measurement of the apparent beam width (ABW). The edge width of
Robert D. Larrabee, Richard M. Silver, M P. Davidson
In the late 1970's, Dr. Diana Nyyssonen demonstrated that NIST could optically calibrate photomask linewidth standards that were narrower than the classical resolution limit of a conventional bright-field microscope. She equated the known position of the
Michael T. Postek, Marylyn H. Bennett, N J. Zaluzec
A portion of the mission of the National Institute of Standards and Technology (NIST) Manufacturing Engineering Laboratory (MEL) is to improve and advance length metrology in aid of U.S. industry. The successful development of a Collaboratory for
Michael T. Postek, Marylyn H. Bennett, N J. Zaluzec
The successful development of a collaboratory for Telepresence Microscopy (TPM) provides an important new tool to promote technology transfer in the areas of measurement technology. NIST and Texas Instruments (TI), under the auspices of the National
John A. Kramar, E Amatucci, David E. Gilsinn, Jay S. Jun, William B. Penzes, Fredric Scire, E C. Teague, John S. Villarrubia
We at NIST are building a metrology instrument called the Molecular Measuring Machine (MMM) with the goal of performing 2D point-to-point measurements with one nanometer accuracy cover a 50 mm by 50 mm area. The instrument combines a scanning tunneling
Richard M. Silver, Theodore D. Doiron, William B. Penzes, S Fox, Edward A. Kornegay, S Rathjen, M Takac, D Owen
In this paper, we describe our design and the manufacturing of a two-dimensional grid artifact of chrome on quartz on a 6 inch by 6 inch by .250 glass blank. The design has been agreed upon by a number of SEMI participants working on a two-dimensional
Both (1+x^2)^(-n) and (sin x/x)^n functions are very close to the Gaussian distribution for large value of n. Based on these functions, two new algorithms are developed for designing high accuracy and high speed recursive type Gaussian digital filters. The
Theodore V. Vorburger, Egon Marx, M E. McKnight, Maria Nadal, P Y. Barnes, Alan Keith Thompson, Michael Galler, Fern Y. Hunt, Mark R. VanLandingham
We show comparisons between calculations and measurements of angle-resolved light scattering distributions from clear dielectric, isotropic coatings. The calculated distributions are derived from topography measurements performed with scanning white light
The National Institute of Standards and Technology (NIST) interferometer for measuring graduated length scales has been in use since 1965. It was developed in response to the redefinition of the meter in 1960 from the prototype platinum-iridium bar to the
Kinematic touch trigger probes are widely used on CMMs. This article gives CMM users advice on how to minimize the systematic errors associated with this class of probes.
When a continuous quantity is measured with a digital instrument or digitized for further processing, a measurement uncertainty component is incurred from quantization of the continuous variable. This uncertainty can be reduced by oversampling and
In scanned probe microscopy, it is necessary to know the tip's geometry in order to correct image distortions due to its finite size. Heretofore, methods have focused upon determining the tip geometry by erosion of a tip characterizer of known geometry
M Calleja, J Anguita, R Garcia, K Birkelund, F Perez-murano, John A. Dagata
Local oxidation of silicon surfaces by scanning probe microscopy is a very promising lithographic approach at nanometre scale. Here, we present two approaches to optimize the oxidation for nanofabrication purposes: (i) we analyse the reproducibility and
Robert D. Larrabee, Richard M. Silver, M P. Davidson
In the late 1970's Dr. Diana Nyyssonen demonstrated that the National Institute of Standards and Technology (NIST) could optically calibrate photomask linewidth standards that were narrower than the classical resolution limit of a conventional bright-field
E Laub, J Huennekens, R K. Namiotka, Zeina J. Kubarych, I Prodan, J La civita, S Webb, I Mazsa
We report the results of an optical-optical double resonance experiment to determine the NaK (3 1PI) state potential energy curve. In the first step, a narrow band cw laser (PUMP) is tuned to line center of a particular 2(A) (1 SIGMA+)(v?, J?) 1(X) (1
Steven D. Phillips, Bruce R. Borchardt, Daniel S. Sawyer, William T. Estler, K Eberhardt, M Levenson, Marjorie A. McClain, Ted Hopp
We describe a Monte Carlo simulation technique where known information about a metrology system is employed as a constraint to distinguish the errors associated with the instrument under consideration from the set of all possible instrument errors. The