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Electronics

Semiconductors

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Displaying 776 - 800 of 1446

Vertically Segregated Structure and Properties of small molecule-polymer blend semiconductors for organic thin film transistors

August 27, 2012
Author(s)
Nayool Shin, Dean DeLongchamp, Jihoon Kang, Regis J. Kline, Lee J. Richter, Vivek Prabhu, Balaji Purushothamanc, John E. Anthony, Do Y. Yoon
The phase-segregated structure and the electrical properties of thin film blends of the small-molecule semiconductor fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene with insulating binder polymers were studied for organic thin film transistor

3D Precision Imaging with a Terahertz-bandwidth, Comb-calibrated Swept Laser

August 26, 2012
Author(s)
Esther Baumann, Fabrizio R. Giorgetta, Ian R. Coddington, Kevin O. Knabe, Laura C. Sinclair, William C. Swann, Nathan R. Newbury
A frequency-comb and MEMS-based external-cavity laser are integrated into a THz-bandwidth LIDAR system. Range to a diffuse target is measured at sub-msec update times, a comb-based precision/accuracy of 100 nm, and a resolution of 150 microns. Example 3D

Microwave measurements and systematic circuit-model extraction of nanowire metal semiconductor field-effect transistors

August 24, 2012
Author(s)
Dazhen Gu, Thomas M. Wallis, Pavel Kabos, Paul T. Blanchard, Kristine A. Bertness, Norman A. Sanford
We present detailed on-wafer scattering parameter measurements and equivalent circuit modeling of metal semiconductor field effect transistor (MESFET) that incorporates a GaN nanowire (NW). A systematic procedure is established to extract intrinsic model

A high-bandwidth electromagnetic MEMS motion stage for scanning applications

August 23, 2012
Author(s)
Young M. Choi, Nicholas G. Dagalakis, Jason J. Gorman, Seung Ho Yang, Yong Sik Kim, Jae M. Yoo
This paper presents the design, fabrication and experimental results of an out-of-plane electromagnetic motion stage. The combination of electromagnetic actuation and a flexure-supported platform enables bidirectional motion with high precision as well as

Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires

August 21, 2012
Author(s)
Andrew M. Herrero, Paul T. Blanchard, Aric W. Sanders, Matthew D. Brubaker, Norman A. Sanford, Alexana Roshko, Kristine A. Bertness
The development of Ni/Au contacts to Mg-doped GaN nanowires (NWs) is examined. Current-voltage (I-V) measurements of these Mg-doped nanowire devices frequently exhibit a strong degradation after annealing in N 2/O 2. This degradation originates from the

Contact resistance of low-temperature carbon nanotube vertical interconnects

August 20, 2012
Author(s)
Ann C. Chiaramonti Debay, Sten Vollebregt, R. Ishihara, Hugo Schellevis, Kees Beenakker
In this work the electrical contact resistance and length dependant resistance of vertically aligned carbon nano- tubes (CNT) grown at 500 °C with high tube density (1011) are investigated by measuring samples with different CNT lengths. From scanning

Metrology for Nanosystems and Nanoelectronics Reliability Assessments

August 20, 2012
Author(s)
Yaw S. Obeng, Chukwudi A. Okoro, Joseph J. Kopanski
The traditional models and techniques for studying reliability in integrated circuits may not be appropriate for nanoelectronics and nanosystems. In this paper, we present an overview of a number of materials and metrology techniques currently under

Physical Model for Random Telegraph Noise Amplitudes and Implications

June 12, 2012
Author(s)
Richard G. Southwick, Kin P. Cheung, Jason P. Campbell, Serghei Drozdov, Jason T. Ryan, John S. Suehle, Anthony Oates
Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices [1]. The most worrisome aspect of RTN is the tail of the
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