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Richard G. Southwick, Kin P. Cheung, Jason P. Campbell, Serghei Drozdov, Jason T. Ryan, John S. Suehle, Anthony Oates
Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices [1]. The most worrisome aspect of RTN is the tail of the
Jason P. Campbell, Kin P. Cheung, Serghei Drozdov, Richard G. Southwick, Jason T. Ryan, Tony Oates, John S. Suehle
A recently developed series resistance (RSD) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent RSD which is observed across a wide range
Philippe V. Afonso, Mirkka Janka-Junttila, Young Jong Lee, Colin P. McCann, Charlotte M. Oliver, Khaled A. Aamer, Wolfgang Losert, Marcus T. Cicerone, Carol A. Parent
Neutrophil recruitment to inflammation sites purportedly depends on sequential waves of chemoattractants. Current models propose that LTB4, a secondary chemoattractant secreted by neutrophils in response to primary chemoattractants such as formyl-peptides
David E. Morris, Melissa L. Mather, Carl Simon Jr., John A. Crowe
The performance of polymer based scaffolds used in regenerative medicine is linked to their structural properties and as such strategies for structural characterization of scaffolds have been developed. X-ray microscopic computed tomography (X-ray micro CT
Atif A. Imtiaz, Thomas M. Wallis, SangHyun S. Lim, H. Tanbakuchi, H-P Huber, A. Hornung, P. Hinterdorfer, J. Smoliner, F. Kienberger, Pavel Kabos
We report frequency dependent contrast in d(S11)/dV measurements of a variably doped p-type silicon sample in the frequency range from 2GHz to 18GHz. The measurements were conducted bys use of a scanning microwave microscope. The measurements were done at
Andras Vladar, John S. Villarrubia, Michael T. Postek, Petr Cizmar
Our world is three-dimensional, so are the integrated circuits (ICs), they have always been. In the past, for a long time, weve been very fortunate, because it was enough to measure the critical dimension (CD), the width of the resist line to keep IC
Richard M. Silver, Jing Qin, Bryan M. Barnes, Hui Zhou, Ronald G. Dixson, Francois R. Goasmat
There has been much recent work in developing advanced optical metrology applications that use imaging optics for critical dimension measurements, defect detection and for potential use with in-die metrology applications. Sensitivity to nanometer scale
Bryan M. Barnes, Martin Y. Sohn, Francois R. Goasmat, Hui Zhou, Richard M. Silver, Abraham Arceo
Smaller patterning dimensions and novel architectures are fostering research into improved methods of defect detection in semiconductor device manufacturing. This initial experimental study, augmented with simulation, evaluates scatterfield microscopy to
Conni Hanke, Petra S. Dittrich, Darwin Reyes-Hernandez
A new system for dielectrophoretic cell capture on porous polyester (PET) membranes is presented. Conventional photolithographic techniques were used to fabricate gold microelectrodes on a PET membrane. We characterized these electrodes to proof that there
John S. Villarrubia, Aron Cepler, Benjamin D. Bunday, Bradley Thiel
In-line, non-destructive process control metrology of high aspect ratio (HAR) holes and trenches has long been a known gap in metrology. Imaging the bottoms of at-node size beyond 10:1 AR contact holes in oxide has not yet been demonstrated. Nevertheless
In this paper, we use a variety of analytical techniques to examine the impact of local chemistry, and the mechanical properties, of the encapsulation dielectric films on the post-packaging device rejection rate of integrated circuit devices. A strong
We report on the development of a method for rapidly characterizing the glycan binding properties of lectins. Catanionic surfactant vesicles were prepared that spontaneously formed in water and remained stable at room temperature for months. By varying the
Eric N. Dattoli, Albert Davydov, Kurt D. Benkstein
The selectivity of a chemiresistive gas sensor comprising an aligned array of single-crystalline tin oxide nanowires (NWs) is shown to be greatly enhanced by combined temperature and gate voltage modulation. This dual modulation was effected by utilization