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Frequency-selective contrast on variably doped p-type silicon with a scanning microwave microscope

Published

Author(s)

Atif A. Imtiaz, Thomas M. Wallis, SangHyun S. Lim, H. Tanbakuchi, H-P Huber, A. Hornung, P. Hinterdorfer, J. Smoliner, F. Kienberger, Pavel Kabos

Abstract

We report frequency dependent contrast in d(S11)/dV measurements of a variably doped p-type silicon sample in the frequency range from 2GHz to 18GHz. The measurements were conducted bys use of a scanning microwave microscope. The measurements were done at a selected frequency by varying the DC tip voltage. The measured d(S11)/dV signal shows maximum for doping concentrations of 10(u)15 (d)- 10(u)16(d)cm(up)03(d) at 2.3 GHz and this maximum sequentially shifts through the regions of increasing dopant concentration displaying maximum for concentrations of 10(u)17(d)-10(u)18(d)cm(up)-3(d) at 17.9 GHz.
Citation
Applied Physics Letters
Volume
111
Issue
9

Citation

Imtiaz, A. , Wallis, T. , Lim, S. , Tanbakuchi, H. , Huber, H. , Hornung, A. , Hinterdorfer, P. , Smoliner, J. , Kienberger, F. and Kabos, P. (2012), Frequency-selective contrast on variably doped p-type silicon with a scanning microwave microscope, Applied Physics Letters, [online], https://doi.org/10.1063/1.4716026 (Accessed April 23, 2024)
Created May 14, 2012, Updated January 27, 2020