Imtiaz, A.
, Wallis, T.
, Lim, S.
, Tanbakuchi, H.
, Huber, H.
, Hornung, A.
, Hinterdorfer, P.
, Smoliner, J.
, Kienberger, F.
and Kabos, P.
(2012),
Frequency-selective contrast on variably doped p-type silicon with a scanning microwave microscope, Applied Physics Letters, [online], https://doi.org/10.1063/1.4716026
(Accessed October 9, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Frequency-selective contrast on variably doped p-type silicon with a scanning microwave microscope
Published
Author(s)
, , , H. Tanbakuchi, H-P Huber, A. Hornung, P. Hinterdorfer, J. Smoliner, F. Kienberger,
Abstract
We report frequency dependent contrast in d(S11)/dV measurements of a variably doped p-type silicon sample in the frequency range from 2GHz to 18GHz. The measurements were conducted bys use of a scanning microwave microscope. The measurements were done at a selected frequency by varying the DC tip voltage. The measured d(S11)/dV signal shows maximum for doping concentrations of 10(u)15 (d)- 10(u)16(d)cm(up)03(d) at 2.3 GHz and this maximum sequentially shifts through the regions of increasing dopant concentration displaying maximum for concentrations of 10(u)17(d)-10(u)18(d)cm(up)-3(d) at 17.9 GHz.Citation
Applied Physics Letters
Volume
111
Issue
9
Pub Type
Journals
Download Paper
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created May 14, 2012, Updated January 27, 2020