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Pragya R. Shrestha, Adaku Ochia, Kin P. Cheung, Jason P. Campbell, Helmut Baumgart, Gary Harris
Accurate capture of the Set/Reset characteristics is a necessary but challenging task for the development of memristive switches. Here we describe and demonstrate a technique capable of meeting this challenge. This technique can measure the transient
Qin Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Sio Hong, Oleg A. Kirillov, Curt A. Richter, Nhan Van Nguyen
The electron energy band alignment of a metal-oxide-semiconductor tunnel field-effect transistor (TFET) heterojunction, W/Al2O3/InGaAs/InAs/InP is determined by internal photoemission spectroscopy. At the oxide flat-band condition, the barrier height from
Yvonne B. Gerbig, Chris A. Michaels, Aaron M. Forster, Robert F. Cook
Indentation-induced phase transformation processes were studied by in situ Raman microspectroscopy of the deformed contact region of silicon on sapphire samples during contact loading and unloading. During loading, the formation of Si-II and another phase
James E. Maslar, William A. Kimes, Brent A. Sperling
An in situ gas-phase diagnostic for the metal alkylamide compound tetrakis(ethylmethylamino) hafnium (TEMAH), Hf[N(C2H5)(CH3)]4, was demonstrated. This diagnostic is based on direct absorption measurement of TEMAH vapor using an external cavity quantum
JMONSEL, an electron beam imaging simulator, has been modified to permit conducting regions of a sample to be designated as unconnected to an external source or sink of charge (floating) or, alternatively, to be connected with a user-specified relaxation
Rapid growth in nanomaterial applications highlight limitations of available physicochemical characterization methods. An in situ electrochemical small-angle neutron scattering (eSANS) meth-odology was devised that enables direct measurements of nano
This 2011 roadmap for radio frequency and analog/mixed-signal (RF and AMS) technologies presents the challenges, technology requirements, and potential solutions for the basic technology elements (transistors and passive devices). RF and AMS technologies
Radio frequency and analog/mixed-signal (RF and A/MS) technologies are essential and critical technologies for the rapidly diversifying semiconductor market that comprises many more applications than the wireless and wire-line communications market that
Micro-Electro-Mechanical Systems (MEMS) are devices that are fabricated using techniques similar to those used for integrated circuits (ICs) to create micrometer-sized mechanical structures (suspended bridges, cantilevers, membranes, fluid channels, etc.)
The International Technology Roadmap for Semiconductors (ITRS) Emerging Research Materials (ERM) and Emerging Research Devices (ERD) Technology Workgroups have identified materials and devices that could enable continued increases in the density and
Over the last decade, the world of semiconductors has broadened its horizon from More Moore and beyond conventional scaling to More than Moore. Some first hypothesized the end of Moores law and the beginning of a new era. They saw it as an OR gate while