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Joseph J. Kopanski, Ilona Sitnitsky, Victor H. Vartanian, Paul McClure, Vladimir Mancevski
Electrical scanning probe microscopes, such as the scanning capacitance microscope (SCM) for two dimensional dopant profiling, scanning Kelvin force microscope (SKFM) for surface potential measurements, and the tunneling atomic force microscope (TUNA) for
Electrical signals are used for endpoint detection in plasma etching, but the origin of the electrical changes observed at endpoint is not known. They may be caused by changes in the gas-phase densities of etch products and reactants or by changes in
Virgil Percec, Steven Hudson, Mihai Peterca, Pawaret Leowanawat, Emad Aqad, Robert Graf, Hans -. Spiess, Xiangbing Zeng, Goran Ungar, Paul A. Heiney
The dendronized perylene 3,4:9,10-tetracarboxylic acid bisimide (PBI) (3,4,5)12G1-3-PBI was recently shown to self-assemble in a complex helical column containing tetramers of PBI as the basic repeat unit. The tetramers contain a pair of two molecules
Richard M. Silver, Bryan Barnes, Martin Sohn, Hui Zhou, Jing Qin
The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark-field inspection methods now at their limits, it has become
Robert R. Keller, Mark C. Strus, Ann C. Chiaramonti Debay, David T. Read, Younglae Kim, Yung J. Jung
We describe the development of electrical test methods to evaluate damage that determines reliability in advanced, small-scale conductors, including damascene copper and aligned carbon nanotube networks. Rapid thermal cycling induced during high-current AC
James E. Maslar, William A. Kimes, Brent A. Sperling
This report describes the performance of a technique for the simultaneous, rapid measurement of major gas phase species present during titanium nitride thermal atomic layer deposition involving tetrakis(dimethylamido) titanium (TDMAT) and ammonia. In this
Ryan P. Koseski, William Alexander Osborn, Stephan J. Stranick, Frank W. DelRio, Mark D. Vaudin, Thuy Dao, Vance H. Adams, Robert F. Cook
The stress in silicon surrounding a tungsten-filled through-silicon via (TSV) is measured using confocal Raman microscopy line scans across the TSV both before and after etch removal of an oxide stack used as a mask to define the TSV during fabrication
Pragya R. Shrestha, Adaku Ochia, Kin P. Cheung, Jason P. Campbell, Helmut Baumgart, Gary Harris
Accurate measurements of the transient details of switching a memristive switch are crucial to the elucidation of the switching mechanism. Such high-speed measurements are often plagued by artifacts. Here we describe a measurement technique capable of
Christopher L. Soles, Hyun W. Ro, A. Wood, N. Estrada, B. Dick, Y. Wang, Micheal Thouless, Rachel Goldman
Nanostructured materials with ultra-small crystallites (approaching the exciton Bohr radius) embedded in a solid-state matrix have great potential for optoelectronic and energy-conversion applications owing to the possibility of invoking quantum effects
Jason T. Ryan, Lan Wei, Jason P. Campbell, Richard G. Southwick, Kin P. Cheung, Anthony Oates, John S. Suehle, Phillip Wong
Meeting reliability requirements is an increasingly more difficult challenge with each generation of CMOS technology. The disconnection between conventional one-size-fits-all reliability specifications and the wide range of circuit applications might be a
We experimentally verify for the first time that random telegraph noise (RTN) in ultra-scaled MOSFETs is related to the inversion charge density in the channel. We then examine the merit of high mobility channel devices from the RTN prospective. This