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  • Published Date
Displaying 851 - 875 of 1446

When Does a Circuit Really Fail?

December 15, 2011
Author(s)
Jason T. Ryan, Lan Wei, Jason P. Campbell, Richard G. Southwick, Kin P. Cheung, Tony Oates, Phillip Wong, John S. Suehle

Origin of Electrical Signals for Plasma Etching Endpoint Detection

November 18, 2011
Author(s)
Mark A. Sobolewski
Electrical signals are used for endpoint detection in plasma etching, but the origin of the electrical changes observed at endpoint is not known. They may be caused by changes in the gas-phase densities of etch products and reactants or by changes in

Self-Repairing Complex Helical Columns Generated via Kinetically Controlled Self-Assembly of Dendronized Perylene Bisimides

November 16, 2011
Author(s)
Virgil Percec, Steven Hudson, Mihai Peterca, Pawaret Leowanawat, Emad Aqad, Robert Graf, Hans -. Spiess, Xiangbing Zeng, Goran Ungar, Paul A. Heiney
The dendronized perylene 3,4:9,10-tetracarboxylic acid bisimide (PBI) (3,4,5)12G1-3-PBI was recently shown to self-assemble in a complex helical column containing tetramers of PBI as the basic repeat unit. The tetramers contain a pair of two molecules

Fundamental Limits of Optical Patterned Defect Metrology

November 14, 2011
Author(s)
Richard M. Silver, Bryan Barnes, Martin Sohn, Hui Zhou, Jing Qin
The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark-field inspection methods now at their limits, it has become

Reliability Testing of Advanced Interconnect Materials

November 10, 2011
Author(s)
Robert R. Keller, Mark C. Strus, Ann C. Chiaramonti Debay, David T. Read, Younglae Kim, Yung J. Jung
We describe the development of electrical test methods to evaluate damage that determines reliability in advanced, small-scale conductors, including damascene copper and aligned carbon nanotube networks. Rapid thermal cycling induced during high-current AC

In Situ Gas Phase Diagnostics for Titanium Nitride Atomic Layer Deposition

October 14, 2011
Author(s)
James E. Maslar, William A. Kimes, Brent A. Sperling
This report describes the performance of a technique for the simultaneous, rapid measurement of major gas phase species present during titanium nitride thermal atomic layer deposition involving tetrakis(dimethylamido) titanium (TDMAT) and ammonia. In this

Micro-scale measurement and modeling of stress in silicon surrounding a tungsten-filled through-silicon via

October 11, 2011
Author(s)
Ryan P. Koseski, William Alexander Osborn, Stephan J. Stranick, Frank W. DelRio, Mark D. Vaudin, Thuy Dao, Vance H. Adams, Robert F. Cook
The stress in silicon surrounding a tungsten-filled through-silicon via (TSV) is measured using confocal Raman microscopy line scans across the TSV both before and after etch removal of an oxide stack used as a mask to define the TSV during fabrication

High Speed Switching Characteristics of Pt/Ta2O5/Cu Memristive Switch

October 8, 2011
Author(s)
Pragya R. Shrestha, Adaku Ochia, Kin P. Cheung, Jason P. Campbell, Helmut Baumgart, Gary Harris
Accurate measurements of the transient details of switching a memristive switch are crucial to the elucidation of the switching mechanism. Such high-speed measurements are often plagued by artifacts. Here we describe a measurement technique capable of

Formation and transfer of GaAsN nanostructure layers

September 27, 2011
Author(s)
Christopher L. Soles, Hyun W. Ro, A. Wood, N. Estrada, B. Dick, Y. Wang, Micheal Thouless, Rachel Goldman
Nanostructured materials with ultra-small crystallites (approaching the exciton Bohr radius) embedded in a solid-state matrix have great potential for optoelectronic and energy-conversion applications owing to the possibility of invoking quantum effects

Circuit-Aware Device Reliability Criteria Methodology

September 12, 2011
Author(s)
Jason T. Ryan, Lan Wei, Jason P. Campbell, Richard G. Southwick, Kin P. Cheung, Anthony Oates, John S. Suehle, Phillip Wong
Meeting reliability requirements is an increasingly more difficult challenge with each generation of CMOS technology. The disconnection between conventional one-size-fits-all reliability specifications and the wide range of circuit applications might be a

High Mobility Channel from the Prospective of Random Telegraph Noise

September 12, 2011
Author(s)
Kin P. Cheung, Jason P. Campbell
We experimentally verify for the first time that random telegraph noise (RTN) in ultra-scaled MOSFETs is related to the inversion charge density in the channel. We then examine the merit of high mobility channel devices from the RTN prospective. This
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