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We describe a method of directly determining blackbody radiance temperatures using filter detectors calibrated for absolute spectral power responsivity. The
Benjamin K. Tsai, D P. DeWitt, Francis J. Lovas, Kenneth G. Kreider, Christopher W. Meyer, David W. Allen
In the semiconductor industry, Rapid Thermal Processing (RTP) utilizes a prescribed temperature-time recipe to silicon wafers undergoing processes such as
John S. Villarrubia, Ronald G. Dixson, Samuel N. Jones, J R. Lowney, Michael T. Postek, Richard A. Allen, Michael W. Cresswell
Uncertainty in the locations of line edges dominates the uncertainty budget for high quality sub-micrometer linewidth measurements. For microscopic techniques
A metrology-based Rockwell hardness scale is established by a standard machine and a standard diamond indenter. Both must be established through force and
John A. Kramar, E Amatucci, David E. Gilsinn, Jay S. Jun, William B. Penzes, Fredric Scire, E C. Teague, John S. Villarrubia
We at NIST are building a metrology instrument called the Molecular Measuring Machine (MMM) with the goal of performing 2D point-to-point measurements with one
S Fox, Mario Dagenais, Edward A. Kornegay, Richard M. Silver
We present results of investigations into optical focus and edge detection algorithms relevant to overlay metrology. We compare gradient energy, standard
Richard M. Silver, Theodore D. Doiron, William B. Penzes, S Fox, Edward A. Kornegay, S Rathjen, M Takac, D Owen
In this paper, we describe our design and the manufacturing of a two-dimensional grid artifact of chrome on quartz on a 6 inch by 6 inch by .250 glass blank
Ronald G. Dixson, R Koning, V W. Tsai, Joseph Fu, Theodore V. Vorburger
Atomic force microscopes (AFMs) are increasingly used in the semiconductor industry as tools for submicrometer dimensional metrology. The scales of an AFM must
Samuel Benz, Clark A. Hamilton, Charles J. Burroughs
Operating margins for biolar superconducting voltage waveform synthesizer were measured. Current ranges were determined for 101 equally spaced dc voltage steps
C Weber, Ronald H. Ono, James Booth, Leila R. Vale, Samuel Benz, A. M. Klushin, H. Kohlstedt, R. Semerad
We have investigated both conventional and meandering coplanar microwave transmission lines patterned in Y-Ba-Cu-O/Au bilayers on yttria-stablized zirconia and
To support the recommendation of shifting transient monitoring from voltage surges to current surges, the paper presents experimental results as well as
James Booth, Leila R. Vale, Ronald H. Ono, John H. Claassen
We demonstrate the use of a new experimental technique based on mutual inductance measurements to quantitatively predict nonlinear effects in microwave
Leila R. Vale, Ronald H. Ono, Donald G. McDonald, Robert J. Phelan
We have developed YBa 2Cu 3O 7-x (YBCO) thermometers for large-area (4 mm x 4 mm) electrical substitution bolometers. We passivated the YBCO with a thin Au
We present design criteria for arrays of Josephson junctions optimized for use in the Josephson digital-analog converter and for a THz oscillator. We will
This paper presents a prototype tool called ACTS (Annotation Collaboration Tool via SMIL), which was designed to meet the user requirements of a distributed
Walter S. Liggett Jr, Samuel Low, David J. Pitchure, Jun-Feng Song
In the use of hardness test blocks, the uncertainty due to block non-uniformity can be reduced if one is willing to make measurements at specified locations on
Robert D. Larrabee, Richard M. Silver, M P. Davidson
In the late 1970's, Dr. Diana Nyyssonen demonstrated that NIST could optically calibrate photomask linewidth standards that were narrower than the classical
Michael T. Postek, Marylyn H. Bennett, N J. Zaluzec
The successful development of a collaboratory for Telepresence Microscopy (TPM) provides an important new tool to promote technology transfer in the areas of
The SEMATECH advanced metrology advisory group (AMAG) recently issued a critical dimension (CD) scanning electron microscope (SEM) specification. One component
Joseph Kopanski, Jay F. Marchiando, Brian G. Rennex
Scanning capacitance microscopy was used to image 1) boron dopant gradients in p-type silicon, and 2) identical boron dopant gradients in n-type silicon. The
S Smith, I. A. Lindsay, Anthony Walton, Michael W. Cresswell, Loren W. Linholm, Richard A. Allen, M. Fallon, Alan Gundlach
The current flow in lightly doped mono-crystalline silicon structures designed for use as low cost secondary reference linewidth standards is investigated. It
Both (1+x^2)^(-n) and (sin x/x)^n functions are very close to the Gaussian distribution for large value of n. Based on these functions, two new algorithms are