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Property databases are widely used for the design and analysis of refrigeration systems. Version 7 of the NIST REFPROP Reference Fluid Thermodynamic and
This paper describes an immersive virtual reality system for steel structures. The system integrates standard models and formats for representing structural
X-Ray Photoelectron Spectroscopy (XPS) is being used to an increasing extent for the characterization of new gate-oxide materials, particularly for the
John G. Gillen, Scott A. Wight, P Chi, Albert J. Fahey, Jennifer R. Verkouteren, Eric S. Windsor, D. B. Fenner
We are evaluating the use of bevel depth profiling Secondary Ion Mass Spectrometry (SIMS) for the characterization of layered semiconductor materials. In this
Ronald L. Jones, T J. Hu, Vivek M. Prabhu, Christopher L. Soles, Eric K. Lin, Wen-Li Wu, D L. Goldfarb, M Angelopoulos
The push to mass production of patterns with sub-100 nm dimensions will require nanometer level control of feature size, including line edge roughness (LER)
Ndubuisi G. Orji, Jayaraman Raja, Son H. Bui, Theodore V. Vorburger
One of the most important aspects of step height evaluation are the analysis algorithms used. There algorithms assume that the profiles and images being
Recently, the Thermocouple Calibration Laboratory at the National Institute of Standards and Technology has used sodium heat-pipe furnaces for the realization
Ryna B. Marinenko, J T. Armstrong, Shirley Turner, Eric B. Steel, F A. Stevie
Bulk SiGe wafers cut from single-crystal boules were evaluated with the electron probe microanalyzer (EPMA) for micro- and macroheterogeneity for use as primary
Kathryn L. Beers, J Cabral, H J. Walls, Alamgir Karim, Eric J. Amis, C Harrison
Rapid prototyping of microfluidic handling devices has gained in popularity due to the ability to quickly test and modify new design features several times in
ABSTRACT A novel cable-based metrology system is presented wherein six cables are connected in parallel from ground-mounted string pots to the moving object of
The 2003 NIST Language Recognition Evaluation was very similar to the last such NIST evaluation in 1996. It was intended to establish a new baseline of current
We participated in field trials of a semi-autonomous vehicle. This gave us an opportunity to collect data on operator interventions. In this paper we present an
Ronald L. Jones, T J. Hu, Eric K. Lin, Wen-Li Wu, D M. Casa, G G. Barclay
The need for sub-nanometer precision metrology of dense patterns for future technology nodes challenges current methods based on light scatterometry, scanning
T Hu, Ronald L. Jones, Wen-Li Wu, Christopher L. Soles, Eric K. Lin, M Arpan, D M. Casa
As the semiconductor industry moves to next-generation lithographies, evaluation of the patterns is more stringent. We demonstrate the capability of small angel
E Jablonski, M Angelopoulos, H Ito, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, S Sambasivan, Daniel A. Fischer, Ronald L. Jones, Eric K. Lin, Wen-Li Wu, D L. Goldfarb, K Temple
Near edge x-ray absorption fine structure (NEXAFS) spectroscopy was used to quantify the surface composition profile (top 1 nm to 6 nm) of model chemically
For calibrations of spectral irradiance standards, a high-temperature blackbody (HTBB) is used as a source of spectral radiance or irradiance as derived from
David W. Allen, Robert D. Saunders, Bettye C. Johnson, Charles E. Gibson, Howard W. Yoon
The International Temperature Scale of 1990 (ITS-90), for temperatures above the freezing temperature of silver, is defined with pyrometers which rely upon
Lightpipe radiation thermometers (LPRTs) are the sensor of choice for temperature measurements in Rapid Thermal Processing (RTP) applications. At the National
Dean C. Ripple, Dana R. Defibaugh, Michael R. Moldover, Gregory F. Strouse
The NIST Primary Acoustic Thermometer will measure the difference between the International TemperatureScale of 1990 and the Kelvin Thermodynamic Scale
To obtain optimal results from plasma processing, the energy of ions incident on substrate wafers must be carefully controlled. Such control has been difficult
During silicon thermal chemical vapor deposition, reactions occurring in the gas phase above the wafer surface can strongly influence the deposited film quality
Kenneth G. Kreider, D H. Chen, D P. DeWitt, William A. Kimes, Benjamin K. Tsai
curate temperature measurements are critical in rapid thermal processing (RTP) of silicon wafers for thermal oxidation and dopant anneals. Many RTP tools use
Kenneth G. Kreider, D H. Chen, D P. DeWitt, William A. Kimes, Benjamin K. Tsai
Lightpipe radiation thermometers (LPRTs) are the preferred temperature monitoring sensor in most rapid thermal processing (RTP) tools for semiconductor
Because high-resolution transmission electron microscopy (HRTEM) relies on a complex contrast mechanism to produce images of gate dielectric films in cross
Stephen E. Stein, Stephen R. Heller, Dmitrii V. Tchekhovskoi
IUPAC has long been involved in the development of systematic and standard procedures for naming chemical substances on the basis of their structure. The
Recent work in testing and comparing maximum-inscribed, minimum-circumscribed, and minimum-zone (Chebyshev) fitting algorithms indicates that serious problems