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Brian Washburn, Jeffrey W. Nicholson, Scott Diddams, M. Yan, C. G. Jorgensen, Nathan R. Newbury
A phase-locked, frequency comb in the near-infrared is presented. Self-referencing detection and stabilization of the carrier-envelope-offset frequency is
Christopher C. White, Jonathan W. Martin, S F. Weber, L Shultz
Standard test methods, such as ASTM C719, evaluate sealant performance though threshold test measurements. This method and its derivatives do not offer reliable
The unsteady suppression process of a laminar methane-air co-flow diffusion flame formed on a cup burner has been studied experimentally and numerically in
Geraldine S. Cheok, William C. Stone, Christoph J. Witzgall
The use and scope of LADAR applications continues to expand as the technology matures. This growth is reflected in NIST's experience with research into the
Property databases are widely used for the design and analysis of refrigeration systems. Version 7 of the NIST REFPROP Reference Fluid Thermodynamic and
E Jablonski, M Angelopoulos, H Ito, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, S Sambasivan, Daniel A. Fischer, Ronald L. Jones, Eric K. Lin, Wen-Li Wu, D L. Goldfarb, K Temple
Near edge x-ray absorption fine structure (NEXAFS) spectroscopy was used to quantify the surface composition profile (top 1 nm to 6 nm) of model chemically
The National Institute of Standards and Technology metrology development for the semiconductor industry and its supporting infrastructure is a broad set of
This paper describes an immersive virtual reality system for steel structures. The system integrates standard models and formats for representing structural
For calibrations of spectral irradiance standards, a high-temperature blackbody (HTBB) is used as a source of spectral radiance or irradiance as derived from
The IPC-2252,'Design Guide for RF/Microwave Circuit Boards,'[1] (superceding the IPC-D-316) was published in July 2002. The IPC-2252 provides information
X-Ray Photoelectron Spectroscopy (XPS) is being used to an increasing extent for the characterization of new gate-oxide materials, particularly for the
David W. Allen, Robert D. Saunders, Bettye C. Johnson, Charles E. Gibson, Howard W. Yoon
The International Temperature Scale of 1990 (ITS-90), for temperatures above the freezing temperature of silver, is defined with pyrometers which rely upon
John G. Gillen, Scott A. Wight, P Chi, Albert J. Fahey, Jennifer R. Verkouteren, Eric S. Windsor, D. B. Fenner
We are evaluating the use of bevel depth profiling Secondary Ion Mass Spectrometry (SIMS) for the characterization of layered semiconductor materials. In this
Lightpipe radiation thermometers (LPRTs) are the sensor of choice for temperature measurements in Rapid Thermal Processing (RTP) applications. At the National
Ronald L. Jones, T J. Hu, Vivek M. Prabhu, Christopher L. Soles, Eric K. Lin, Wen-Li Wu, D L. Goldfarb, M Angelopoulos
The push to mass production of patterns with sub-100 nm dimensions will require nanometer level control of feature size, including line edge roughness (LER)
Dean C. Ripple, Dana R. Defibaugh, Michael R. Moldover, Gregory F. Strouse
The NIST Primary Acoustic Thermometer will measure the difference between the International TemperatureScale of 1990 and the Kelvin Thermodynamic Scale
Ndubuisi G. Orji, Jayaraman Raja, Son H. Bui, Theodore V. Vorburger
One of the most important aspects of step height evaluation are the analysis algorithms used. There algorithms assume that the profiles and images being
To obtain optimal results from plasma processing, the energy of ions incident on substrate wafers must be carefully controlled. Such control has been difficult
Recently, the Thermocouple Calibration Laboratory at the National Institute of Standards and Technology has used sodium heat-pipe furnaces for the realization
During silicon thermal chemical vapor deposition, reactions occurring in the gas phase above the wafer surface can strongly influence the deposited film quality
Ryna B. Marinenko, J T. Armstrong, Shirley Turner, Eric B. Steel, F A. Stevie
Bulk SiGe wafers cut from single-crystal boules were evaluated with the electron probe microanalyzer (EPMA) for micro- and macroheterogeneity for use as primary
Kathryn L. Beers, J Cabral, H J. Walls, Alamgir Karim, Eric J. Amis, C Harrison
Rapid prototyping of microfluidic handling devices has gained in popularity due to the ability to quickly test and modify new design features several times in
Kenneth G. Kreider, D H. Chen, D P. DeWitt, William A. Kimes, Benjamin K. Tsai
curate temperature measurements are critical in rapid thermal processing (RTP) of silicon wafers for thermal oxidation and dopant anneals. Many RTP tools use
Kenneth G. Kreider, D H. Chen, D P. DeWitt, William A. Kimes, Benjamin K. Tsai
Lightpipe radiation thermometers (LPRTs) are the preferred temperature monitoring sensor in most rapid thermal processing (RTP) tools for semiconductor
ABSTRACT A novel cable-based metrology system is presented wherein six cables are connected in parallel from ground-mounted string pots to the moving object of
Because high-resolution transmission electron microscopy (HRTEM) relies on a complex contrast mechanism to produce images of gate dielectric films in cross