Bevel Depth Profiling SIMS for Analysis of Layer Structures

Published

September 1, 2003

Author(s)

John G. Gillen, Scott A. Wight, P Chi, Albert J. Fahey, Jennifer R. Verkouteren, Eric S. Windsor, D. B. Fenner

Abstract

We are evaluating the use of bevel depth profiling Secondary Ion Mass Spectrometry (SIMS) for the characterization of layered semiconductor materials. In this procedure, a sub-degree angle bevel is cut into the analytical sample with an oxygen or cesium primary ion beam in a commercial SIMS instrument. The elemental distribution of the resulting bevel surface is then imaged with a focused ion beam in the same instrument. This approach offers maximum flexibility for depth profiling analysis. The primary beam energy, incident angle and species used to cut the bevel can be optimized to minimize ion beam mixing and surface topography independent of the conditions used for secondary ion analysis. In some cases, depth resolution can be greater than available from conventional depth profiling. Removal of residual surface damage/topography created during beveling has also been investigated.

Proceedings Title

Characterization and Metrology for ULSI Technology: AIP Conference Proceedings

Volume

683

Conference Dates

March 24-28, 2003

Conference Location

Austin, TX

Conference Title

2003 International Conference on Characterization and Metrology for ULSI Technology

Pub Type

Conferences

Keywords

bevel profiling, depth profile, secondary ion mass spectrometry

Citation

Gillen, J. , Wight, S. , Chi, P. , Fahey, A. , Verkouteren, J. , Windsor, E. and Fenner, D. (2003), Bevel Depth Profiling SIMS for Analysis of Layer Structures, Characterization and Metrology for ULSI Technology: AIP Conference Proceedings, Austin, TX (Accessed October 11, 2025)