In Situ Optical Diagnostics of Silicon Chemical Vapor Deposition Gas-Phase Processes
James E. Maslar, Wilbur S. Hurst
During silicon thermal chemical vapor deposition, reactions occurring in the gas phase above the wafer surface can strongly influence the deposited film quality. Depending on the process conditions, e.g., temperature, silicon precursor, carrier gas, pressure, etc., gas phase reactions can include not only precursor decomposition but also nucleation of silicon nanoparticles above the wafer surface. Optical diagnostics were employed to investigate such processes during silicon chemical vapor deposition via silane pyrolysis. Measurements were performed in a vertical flow, rotating disk reactor under various process conditions. Gas temperature profiles were determined using rotational Raman spectroscopy. Gas phase silicon particle spatial distributions were determined with elastic light scattering. Chemical composition of the particles was investigated with vibrational Raman spectroscopy. Data from these measurements have been used for validation of a numerical silicon chemical vapor deposition process model.
Characterization and Metrology for ULSI Technology, International Conference | | Characterization and Metrology for ULSI Technology: 2003 International Conference on Characterization and Metrology for ULSI Technology | AIP
March 1, 0024
AIP Conference Proceedings
in situ Raman spectroscopy, silane pyrolysis, silicon thermal chemical vapor depositio
Created September 1, 2003, Updated February 17, 2017