Foran, B.
, Kastenmeier, B.
and Bright, D.
(2003),
Determination of Pore-Size Distributions in Low-Κ Dielectric Films by Transmission Electron Microscopy, Characterization and Metrology for ULSI Technology | | Characterization and Metrology for ULSI Technology: 2003 International Conference on Characterization and Metrology for ULSI Technology | AIP, Austin, TX, US
(Accessed April 24, 2024)
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Determination of Pore-Size Distributions in Low-Κ Dielectric Films by Transmission Electron Microscopy
Published
Author(s)
B J. Foran, B Kastenmeier,
Abstract
This paper discusses methods of characterizing pore size distributions in low-k films by transmission electron microscopy (TEM), comparing both conventional TEM and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Methods of sample preparation were tailored to protect pore structure during cross-sectional thinning allowing techniques similar to conventional mechanical polishing and low-angle ion milling. Knowledge of TEM sample thickness allows quantification of pore density distributions. TEM sample thickness and quantitative image analysis methods are discussed.Proceedings Title
Characterization and Metrology for ULSI Technology | | Characterization and Metrology for ULSI Technology: 2003 International Conference on Characterization and Metrology for ULSI Technology | AIP
Volume
683
Conference Dates
March 24-28, 2003
Conference Location
Austin, TX, US
Conference Title
AIP Conference Proceedings
Pub Type
Conferences
Keywords
dielectric films, HAADF-STEM, image processing, pore size distribution porous low-k, scanning transmission electron microscop, transmission electron microscopy
Citation
Created August 31, 2003, Updated October 12, 2021