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Conferences

Using uncalibrated lasers as wavelength standards

Author(s)
Jack A. Stone Jr.
The fundamental atomic physics of a gas laser transition is such that the transition frequency, or equivalently, the vacuum wavelength of the laser, cannot vary

f1' EVALUATION AND MEASUREMENT COMPARISON

Author(s)
Jiangen PAN, Haiping SHEN, Yuqin Zong, Yoshi Ohno
The mismatch of spectral responsivity to the CIE V(lambda) function, i. e., the f1' index, is the most critical characteristic of photometers and tristimulus

An Application Framework for IEEE 1588 Standard

Author(s)
Yuyin Song, Kang B. Lee
This paper introduces an application framework for the Institute of Electrical and Electronics Engineers (IEEE) 1588 standard. This application framework

The Iris Challenge Evaluation 2005

Author(s)
P J. Phillips, Kevin W. Bowyer, Patrick J. Flynn, Xiaomei Liu, W T. Scruggs
This paper describes the Iris Challenge Evaluation (ICE) 2005. The ICE 2005 contains a dataset of 2953 iris images from 132 subjects. The data is organized into

Does the Angle of a Fingerprint Scanner Affect User Performance?

Author(s)
Mary F. Theofanos, Ross J. Micheals, Shahram Orandi, Brian C. Stanton, Nien F. Zhang, Charles L. Sheppard
As the deployment of biometric technologies such as fingerprints has become more widespread in government applications there is an increased awareness of the

IEEE TC-10: Update 2008

Author(s)
Nicholas G. Paulter Jr., Thomas E. Linnenbrink, W. B. Boyer, Robert Graham, S. J. Tilden
There is a world-wide need to standardize terms, test methods, and the computation of performance parameters for devices that generate, measure, and analyze

Focus on Quality, Predicting FRVT 2006 Performance

Author(s)
P J. Phillips, J. R. Beveridge, Geof H. Givens, Bruce A. Draper, Yui M. Lui
This paper summarizes a study carried out on data from the Face Recognition Vendor Test 2006 (FRVT 2006). The finding of greatest practical importance is the

Strategies for hp-Adaptive Refinement

Author(s)
William F. Mitchell
In the hp-adaptive version of the finite element method for solving partial differential equations, the grid is adaptively refined in both h, the size of the

Resistivity study of si-doped GaN nanowires grown by catalyst-free MBE

Author(s)
Lorelle Mansfield, Paul T. Blanchard, Devin M. Rourke, Aric W. Sanders, Norman A. Sanford, Kristine A. Bertness
GaN nanowires doped with silicon were grown on Si(111) substrates by catalyst-free molecular beam epitaxy (MBE). Contacts were fabricated to single nanowires
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