Resistivity study of si-doped GaN nanowires grown by catalyst-free MBE
Lorelle Mansfield, Paul T. Blanchard, Devin M. Rourke, Aric W. Sanders, Norman A. Sanford, Kristine A. Bertness
GaN nanowires doped with silicon were grown on Si(111) substrates by catalyst-free molecular beam epitaxy (MBE). Contacts were fabricated to single nanowires with a Ti/Al metallization scheme. Low-resistance ohmic contacts were achieved after annealing for 60 seconds at 500 ?C in 5 % hydrogen and 95 % argon ambient. Using current-voltage curves to determine the resistance of several wires from each growth run and SEM to measure the dimensions, we were able to calculate a specific contact resistivity for nanowires with different doping densities. A growth run consisting of highly doped wires had a specific contact resistivity of 1.9 x 10-5 Ω-cm2. We also estimated a bulk resistivity of approximately 0.003 Ω-cm and a free carrier concentration in the nanowires on the order of 1.5 to 2 x 1019 cm-3. Moderately doped nanowires had a higher specific contact resistivity of 3.5 x 10-4 Ω-cm2, an estimated bulk resistivity of 0.01 Ω-cm, and a free carrier concentration on the order of 3.5 x 1018 cm-3.
Proc., International Conference of Nitride Semiconductors
September 16-21, 2007
Las Vegas, NV
International Conference of Nitride Semiconductors
, Blanchard, P.
, Rourke, D.
, Sanders, A.
, Sanford, N.
and Bertness, K.
Resistivity study of si-doped GaN nanowires grown by catalyst-free MBE, Proc., International Conference of Nitride Semiconductors, Las Vegas, NV
(Accessed November 30, 2023)