The U.S. Department of Commerce awarded Samsung Austin Semiconductor, LLC, a subsidiary of Samsung Electronics (Samsung), up to $4.745 billion in direct funding under the CHIPS and Science Act to strengthen the resilience of the U.S. semiconductor supply chain, advance U.S. technology leadership, and fuel U.S. global competitiveness. Samsung – the only leading-edge semiconductor company that is a leader in both advanced memory and advanced logic technologies – is expected to invest over $37 billion dollars in the region in the coming years, and the investment would support the creation of over 15,000 jobs.
The CHIPS investment would turn Samsung’s existing presence in Texas into a comprehensive ecosystem for the development and production of leading-edge, current generation, and mature node logic chips in the United States, including two new leading-edge logic fabs and an R&D fab in Taylor, as well as an expansion to the company’s existing Austin facility. It also demonstrates Samsung’s ongoing commitment to the United States, where it has been manufacturing chips since 1996. By continuing to develop the technologies of the future in the United States, Samsung is taking steps towards strengthening U.S. economic and national security and increasing the resilience of both the U.S. and global semiconductor supply chains.
The CHIPS investment would be split across multiple projects at two locations in Central Texas:
Samsung Project Overview | ||
|---|---|---|
Project Summary | Recipient | Samsung Austin Semiconductor, LLC, a subsidiary of Samsung Electronics |
| Location(s) | Taylor, Texas Austin, Texas | |
| Congressional District(s) | TX-31 & TX-35 | |
Financial Summary | Program | CHIPS Program Office |
| Direct Funding Amount | $4.745 billion | |
| Expected Capital Expenditure | Over $37 billion | |
Workforce Summary | Estimated Job Creation | Over 3,500 manufacturing jobs 12,000 construction jobs |
| CHIPS Workforce Funding | $45 million | |
Facility Summary | Project Type | 2 leading-edge logic fabs, and an R&D fab Expansion of existing facility |
| Technologies | Increased leading-edge semiconductor capacity for 2nm process technologies, and R&D focused on manufacturing nodes several generations ahead of nodes currently in production Support the production of leading fully depleted silicon-on-insulator (FD-SOI) process technologies for critical U.S. industries, including aerospace, defense, and automotive | |
| Project Timeline | All facilities are expected to be operational by 2030 | |